18598173. SEMICONDUCTOR DEVICE WITH COMPOSITE CONDUCTIVE FEATURES AND METHOD FOR PREPARING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
SEMICONDUCTOR DEVICE WITH COMPOSITE CONDUCTIVE FEATURES AND METHOD FOR PREPARING THE SAME
Organization Name
Inventor(s)
TZU-CHING Tsai of TAIPEI CITY (TW)
SEMICONDUCTOR DEVICE WITH COMPOSITE CONDUCTIVE FEATURES AND METHOD FOR PREPARING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18598173 titled 'SEMICONDUCTOR DEVICE WITH COMPOSITE CONDUCTIVE FEATURES AND METHOD FOR PREPARING THE SAME
The present disclosure describes a semiconductor device with a composite conductive feature and an air gap, along with a method for its preparation. The device includes composite conductive features over pattern-dense and pattern-loose regions of a semiconductor substrate, separated by a dielectric layer. The air gap separates the first and second composite conductive features, while the third and fourth composite conductive features are in direct contact with the substrate.
- The semiconductor device features composite conductive features over different regions of the semiconductor substrate.
- An air gap separates certain composite conductive features, enhancing performance.
- The dielectric layer provides insulation and protection to the semiconductor substrate.
- The device design allows for efficient operation and improved functionality.
- The method for preparing the semiconductor device ensures precise placement and configuration of the composite conductive features.
Potential Applications: - Integrated circuits - Microprocessors - Memory devices
Problems Solved: - Enhanced performance through air gap technology - Efficient use of space on semiconductor substrates
Benefits: - Improved conductivity and insulation - Enhanced device performance and reliability
Commercial Applications: Title: Semiconductor Device with Composite Conductive Feature and Air Gap This technology can be utilized in various electronic devices, leading to more efficient and reliable semiconductor components. The market implications include advancements in semiconductor technology and improved performance in electronic devices.
Questions about Semiconductor Device with Composite Conductive Feature and Air Gap: 1. How does the air gap in the semiconductor device impact its performance? The air gap in the semiconductor device helps to reduce interference and improve conductivity between composite conductive features.
2. What are the potential applications of this technology beyond semiconductor devices? This technology can also be applied in other electronic components where precise placement of conductive features is crucial for performance.
Original Abstract Submitted
The present disclosure provides a semiconductor device with a composite conductive feature and an air gap and a method for preparing the semiconductor device. The semiconductor device includes a first composite conductive feature and a second composite conductive feature disposed over a pattern-dense region of a semiconductor substrate. The semiconductor device also includes a third composite conductive feature and a fourth composite conductive feature disposed over a pattern-loose region of the semiconductor substrate. The semiconductor device further includes a dielectric layer disposed over the pattern-dense region and the pattern-loose region of the semiconductor substrate. A first portion of the dielectric layer between the first composite conductive feature and the second composite conductive feature is separated from the semiconductor substrate by an air gap. A second portion of the dielectric layer between the third composite conductive feature and the fourth composite conductive feature is in direct contact with the semiconductor substrate.
