18598167. SEMICONDUCTOR DEVICE WITH COMPOSITE CONDUCTIVE FEATURES AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
SEMICONDUCTOR DEVICE WITH COMPOSITE CONDUCTIVE FEATURES AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
TENG-YEN Huang of TAIPEI CITY (TW)
SEMICONDUCTOR DEVICE WITH COMPOSITE CONDUCTIVE FEATURES AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18598167 titled 'SEMICONDUCTOR DEVICE WITH COMPOSITE CONDUCTIVE FEATURES AND METHOD FOR FABRICATING THE SAME
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure and a first connecting structure, with unique features such as a first porous layer and first composite conductive features.
- The first connecting structure consists of a first connecting insulating layer, two first conductive layers, and a first porous layer with a porosity between about 25% and 100%.
- The first semiconductor structure comprises a plurality of first composite conductive features, with at least one feature including a first protection liner, a first graphene liner, and a first core conductor.
Potential Applications: - This technology could be applied in the semiconductor industry for advanced electronic devices. - It may find use in the development of high-performance computing systems.
Problems Solved: - Addresses the need for improved semiconductor devices with enhanced conductivity and insulation properties. - Offers a solution for creating more efficient and reliable electronic components.
Benefits: - Increased performance and reliability of semiconductor devices. - Enhanced conductivity and insulation properties for better overall functionality.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Electronic Components Potential commercial uses include the production of high-speed processors, memory modules, and other electronic components. This innovation could lead to advancements in various industries relying on cutting-edge semiconductor technology.
Questions about Semiconductor Device Technology: 1. How does the first porous layer contribute to the performance of the semiconductor device? The first porous layer enhances the insulation properties of the device while maintaining adequate conductivity.
2. What are the advantages of using graphene in the first composite conductive features? Graphene provides excellent conductivity and mechanical strength, improving the overall performance of the semiconductor device.
Original Abstract Submitted
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure and a first connecting structure, wherein the first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, two first conductive layers positioned in the first connecting insulating layer, and a first porous layer positioned between the two first conductive layers. A porosity of the first porous layer is between about 25% and about 100%. The first semiconductor structure includes a plurality of first composite conductive features, wherein at least one of the plurality of first composite conductive features includes a first protection liner, a first graphene liner in the first protection liner and a first core conductor in the first graphene liner.
