18595331. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Kenta Shimomura of Kuwana Mie (JP)
Karin Takayama of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18595331 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the patent application consists of several key components:
- A first conductive film
- A semiconductor layer on the first conductive film
- A stacked body with multiple conductive layers insulated from each other and stacked above the semiconductor layer
- A semiconductor film extending through the stacked body and the first conductive film
- An insulating film between the conductive layers in the stacked body and the semiconductor film
- A second conductive film containing carbon, in direct contact with the first conductive film and one end or side surface of the semiconductor film
Potential Applications: - Memory storage devices - Semiconductor technology - Electronics manufacturing
Problems Solved: - Improved memory storage capabilities - Enhanced semiconductor performance - Increased efficiency in electronics manufacturing
Benefits: - Higher storage capacity - Faster data processing - More reliable semiconductor devices
Commercial Applications: Title: "Innovative Semiconductor Memory Device for Enhanced Data Storage" This technology could be utilized in various commercial applications such as: - Consumer electronics - Data centers - Automotive electronics
Prior Art: Readers can explore prior art related to semiconductor memory devices, conductive films, and stacked body structures in semiconductor technology research.
Frequently Updated Research: Stay informed about the latest advancements in semiconductor memory devices, conductive film materials, and insulating film technologies to enhance your understanding of this innovative patent application.
Questions about Semiconductor Memory Devices: 1. How does the use of a second conductive film containing carbon improve the performance of the semiconductor memory device? 2. What are the potential challenges in manufacturing semiconductor memory devices with stacked body structures and multiple conductive layers?
Original Abstract Submitted
A semiconductor memory device includes a first conductive film, a semiconductor layer on the first conductive film, a stacked body having a plurality of conductive layers insulated from each other and stacked above the semiconductor layer in a stacking direction, a semiconductor film extending through the stacked body and the first conductive film in the stacking direction, an insulating film extending in the stacking direction between the plurality of conductive layers in the stacked body and the semiconductor film, and a second conductive film containing carbon, that is in direct contact with the first conductive film and with one end or a side surface of the semiconductor film.
