18594816. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18594816 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of a metal pattern on a semiconductor substrate, an etch stop layer covering the metal pattern, an interlayer dielectric layer, and a contact plug connecting to the metal pattern.
- The etch stop layer is made up of a first insulation layer containing a metallic element and nitrogen, a second insulation layer containing carbon, and a third insulation layer without a metallic element and carbon.
- The contact plug penetrates the interlayer dielectric layer and the etch stop layer to establish a connection with the metal pattern.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices with improved performance and reliability. - It can be applied in the production of integrated circuits and microprocessors for various electronic devices.
Problems Solved: - Enhances the durability and functionality of semiconductor devices by providing a reliable connection between the metal pattern and the contact plug. - Helps in preventing etching damage to the metal pattern during the manufacturing process.
Benefits: - Improved electrical conductivity and signal transmission within semiconductor devices. - Increased longevity and stability of the devices due to the robust connection provided by the contact plug.
Commercial Applications: - This technology has significant commercial implications in the semiconductor industry, particularly in the development of high-performance electronic devices. - It can be utilized by semiconductor manufacturers to enhance the quality and efficiency of their products, leading to a competitive edge in the market.
Questions about the technology: 1. How does the presence of nitrogen in the first insulation layer contribute to the performance of the semiconductor device? 2. What are the specific advantages of using a multi-layered etch stop layer in semiconductor manufacturing processes?
Original Abstract Submitted
A semiconductor device including a metal pattern on a semiconductor substrate; an etch stop layer covering the metal pattern, the etch stop layer including a sequentially stacked first insulation layer, second insulation layer, and third insulation layer; an interlayer dielectric layer on the etch stop layer; and a contact plug penetrating the interlayer dielectric layer and the etch stop layer, the contact plug being connected to the metal pattern, wherein the first insulation layer includes a first insulating material that contains a metallic element and nitrogen, wherein the second insulation layer includes a second insulating material that contains carbon, and wherein the third insulation layer includes a third insulating material that does not contain a metallic element and carbon.
