18594394. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Masatoshi Yoshikawa of Setagaya Tokyo (JP)
Tian Li of Yokohama Kanagawa (JP)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18594394 titled 'MAGNETIC MEMORY DEVICE
According to one embodiment, a magnetic memory device is provided with a first conductive layer and first and second magnetoresistive effect elements that extend in a first direction, are spaced apart in a second direction perpendicular to the first direction, and are each in contact with the first conductive layer. The first conductive layer includes a first portion that does not overlap with either magnetoresistive effect element, a second portion that overlaps with the central region of the first magnetoresistive effect element, and a third portion that overlaps with the edge region of the first magnetoresistive effect element.
- First conductive layer
- First and second magnetoresistive effect elements
- Spaced apart in a second direction
- Overlapping portions with magnetoresistive effect elements
- Memory device structure
Potential Applications: - Magnetic storage devices - Data storage in electronic devices - Magnetic sensors
Problems Solved: - Efficient data storage - Improved magnetoresistive effect element design - Enhanced memory device performance
Benefits: - Increased data storage capacity - Faster data access speeds - Enhanced reliability of memory devices
Commercial Applications: Title: Advanced Magnetic Memory Devices for Next-Generation Electronics This technology can be used in: - Hard drives - Solid-state drives - Magnetic random-access memory (MRAM) devices
Questions about Magnetic Memory Devices: 1. How does the design of the first conductive layer impact the performance of the magnetoresistive effect elements? 2. What are the potential challenges in scaling this technology for mass production?
Original Abstract Submitted
According to one embodiment, there is provided a magnetic memory device including a first conductive layer; and a first magnetoresistive effect element and a second magnetoresistive effect element that each extends in a first direction, are provided apart from each other in a second direction crossing the first direction, and are each in contact with the first conductive layer, wherein the first conductive layer includes a first portion that does not overlap with any of the first magnetoresistive effect element and the second magnetoresistive effect element when viewed in the first direction, a second portion that overlaps with a central region of the first magnetoresistive effect element when viewed in the first direction, and a third portion that overlaps with an edge region of the first magnetoresistive effect element when viewed in the first direction.
