18592970. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kotaro Noda of Yokkaichi Mie (JP)
Takahiro Fujii of Nagoya Aichi (JP)
Takanori Akita of Yokkaichi Mie (JP)
Mutsumi Okajima of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18592970 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes multiple layers and components that work together to enhance its functionality and performance.
- The device features a first oxide semiconductor layer, a first wiring, a first insulating film, a first conductor, a second wiring, a first insulating layer, and a second insulating layer with specific oxygen permeability properties.
- The first oxide semiconductor layer extends in one direction, while the first wiring extends in a different direction, intersecting the first direction and surrounding the semiconductor layer.
- The first insulating film is positioned between the first wiring and the first oxide semiconductor layer to prevent interference.
- A first conductor is placed on the first oxide semiconductor layer, followed by a second wiring that extends in a direction intersecting the first and second directions.
- The first insulating layer is in contact with the side surface of the second wiring, and the second insulating layer has lower oxygen permeability than the first insulating layer.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can be used in the development of high-performance integrated circuits and microprocessors.
Problems Solved: - The technology addresses the need for improved insulation and oxygen permeability in semiconductor devices to enhance their efficiency and reliability.
Benefits: - Enhanced performance and reliability of semiconductor devices. - Improved insulation and oxygen permeability properties for better functionality.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of cutting-edge electronic devices, such as smartphones, tablets, and computers, to improve their overall performance and efficiency in various applications.
Questions about Semiconductor Device Technology: 1. How does the specific oxygen permeability of the second insulating layer contribute to the overall functionality of the semiconductor device? 2. What are the potential implications of using this advanced technology in the development of next-generation electronic devices?
Original Abstract Submitted
A semiconductor device includes a first oxide semiconductor layer extending in a first direction, a first wiring extending in a second direction that intersects the first direction and surrounding the first oxide semiconductor layer, a first insulating film provided between the first wiring and the first oxide semiconductor layer, a first conductor provided on the first oxide semiconductor layer, a second wiring provided on the first conductor and extending in a third direction that intersects each of the first direction and the second direction, a first insulating layer in contact with a side surface of the second wiring, and a second insulating layer provided on the first insulating layer and having oxygen permeability lower than oxygen permeability of the first insulating layer.
