18588565. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Toru Nakanishi of Yokohama Kanagawa (JP)
Fumitaka Arai of Yokohama Kanagawa (JP)
Kouji Matsuo of Ama Aichi (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18588565 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes multiple gate electrode layers, semiconductor layers, and wiring layers arranged in a specific configuration.
- The device features first to fourth gate electrode layers extending in a first direction.
- A first semiconductor layer extends in a second direction intersecting the first direction, positioned between specific gate electrode layers.
- Wiring layers extend in a third direction and are electrically connected to corresponding gate electrode layers.
- The layers are arranged in a precise manner to optimize the functionality of the memory device.
Potential Applications: - This technology can be used in various electronic devices requiring high-speed and efficient memory storage. - It can be integrated into smartphones, computers, and other consumer electronics for improved performance.
Problems Solved: - Addresses the need for compact and high-performance memory solutions in modern electronic devices. - Enhances data storage and retrieval capabilities in a more efficient manner.
Benefits: - Improved memory storage capacity and speed. - Enhanced overall performance of electronic devices. - Compact design suitable for various applications.
Commercial Applications: Title: Advanced Semiconductor Memory Device for Enhanced Electronic Performance This technology can be utilized in the production of next-generation electronic devices, catering to the growing demand for faster and more efficient memory solutions in the market.
Prior Art: Readers can explore existing patents related to semiconductor memory devices and similar technologies to gain a deeper understanding of the field.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor memory technology to leverage cutting-edge innovations for future developments.
Questions about Semiconductor Memory Devices: 1. How does the configuration of gate electrode layers impact the performance of the semiconductor memory device? - The arrangement of gate electrode layers plays a crucial role in controlling the flow of electric current within the device, affecting its overall functionality and efficiency.
2. What are the key factors influencing the design and development of semiconductor memory devices? - Factors such as speed, capacity, power consumption, and integration capabilities heavily influence the design and development of semiconductor memory devices.
Original Abstract Submitted
A semiconductor memory device of the embodiment includes first to fourth gate electrode layers which extend in a first direction, a first semiconductor layer which extends in a second direction intersecting the first direction and is provided between the first gate electrode layer and the third gate electrode layer, and between the second gate electrode layer and the fourth gate electrode layer, a first wiring layer which extends in a third direction intersecting the first direction and the second direction and is electrically connected to the first gate electrode layer, a second wiring layer which is electrically connected to the second gate electrode layer, a third wiring layer which extends in the third direction and is electrically connected to the third gate electrode layer, and a fourth wiring layer which extends in the third direction and is electrically connected to the fourth gate electrode layer. The first wiring layer is provided between the third wiring layer and the fourth wiring layer, and the second wiring layer is provided between the first wiring layer and the fourth wiring layer.
