18588249. SEMICONDUCTOR DEVICE simplified abstract (Japan Display Inc.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Toshinari Sasaki of Tokyo (JP)
Marina Mochizuki of Tokyo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18588249 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation: The semiconductor device described in the patent application consists of two transistors stacked on top of each other. The first transistor has a gate electrode, an insulating film, and an oxide semiconductor layer, while the second transistor has additional layers on top of the first transistor.
Key Features and Innovation:
- Stacked transistors design
- Use of oxide semiconductor layers
- Polycrystalline structure in the oxide semiconductor layer
- Multiple gate electrodes for each transistor
Potential Applications: The technology could be applied in:
- Integrated circuits
- Microprocessors
- Memory devices
Problems Solved: The technology addresses issues related to:
- Increasing transistor density
- Improving performance
- Reducing power consumption
Benefits:
- Higher integration levels
- Enhanced device performance
- Lower power consumption
Commercial Applications: Potential commercial uses include:
- Consumer electronics
- Telecommunications
- Automotive industry
Prior Art: Readers can explore prior art related to stacked transistors, oxide semiconductor layers, and polycrystalline structures in semiconductor devices.
Frequently Updated Research: Stay updated on the latest advancements in stacked transistor technology, oxide semiconductors, and polycrystalline structures for semiconductor devices.
Questions about Semiconductor Device Technology: 1. How does the use of oxide semiconductor layers impact the performance of the transistors? 2. What are the potential challenges in implementing stacked transistor designs in practical applications?
Original Abstract Submitted
A semiconductor device includes a first transistor on a substrate and a second transistor on the first transistor. The first transistor includes a first gate electrode on the substrate, a first insulating film on the first gate electrode, a first oxide semiconductor layer on the first insulating film, having a region overlapping the first gate electrode, and having a polycrystalline structure, a second insulating film on the first oxide semiconductor layer, and a second gate electrode on the second insulating film. The second transistor includes a third gate electrode on the second insulating film, a third insulating film on the third gate electrode, a second oxide semiconductor layer on the third insulating film and having a region overlapping the third gate electrode, a fourth insulating film on the second oxide semiconductor layer, and a fourth gate electrode on the fourth insulating film.
