18588163. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Jung Taek Kim of Yongin-si (KR)
Seok Hoon Kim of Suwon-si (KR)
Moon Seung Yang of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18588163 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the patent application features a multi-channel active pattern with gate structures that are spaced apart from each other in one direction and include a gate electrode extending in a different direction. The device also includes source/drain recesses between the gate structures and a source/drain pattern on the active pattern within the recesses.
- The source/drain pattern consists of a semiconductor liner layer containing silicon-germanium, a semiconductor filling layer also containing silicon-germanium, and one or more semiconductor insertion layers between the liner and filling layers, which have a saddle structure.
- Key Features and Innovation:
- Multi-channel active pattern design - Gate structures with gate electrodes in a different direction - Source/drain pattern with semiconductor liner, filling, and insertion layers - Saddle structure in the semiconductor insertion layers
- Potential Applications:
- Advanced semiconductor devices - High-performance electronics - Integrated circuits
- Problems Solved:
- Enhancing device performance - Improving conductivity - Reducing resistance
- Benefits:
- Increased efficiency - Enhanced functionality - Better overall device performance
- Commercial Applications:
- Semiconductor industry - Electronics manufacturing - Research and development companies
- Prior Art:
- Prior research on multi-channel active patterns - Studies on source/drain patterns in semiconductor devices
- Frequently Updated Research:
- Ongoing advancements in semiconductor technology - Research on silicon-germanium materials
Questions about the technology: 1. How does the saddle structure in the semiconductor insertion layers contribute to the device's performance? 2. What are the potential challenges in manufacturing semiconductor devices with such intricate source/drain patterns?
Original Abstract Submitted
A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.
