18576203. POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
Contents
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Nobuyoshi Kimoto of Fukuoka (JP)
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18576203 titled 'POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE
The power semiconductor device described in the patent application features high heat dissipation capabilities, achieved through various components such as a semiconductor element, a heat sink, grease, an adhesive, and a terminal block.
- The semiconductor device comprises a semiconductor element, a sealant sealing the element, and a power terminal electrically connected to the semiconductor element.
- A selective area of the lower surface of the semiconductor device is bonded to the heat sink using adhesive, while the rest of the surface is in contact with the heat sink through grease.
- The terminal block includes an electrode on its upper surface, to which the power terminal is fastened and electrically connected.
Potential Applications: - Power electronics - Renewable energy systems - Electric vehicles
Problems Solved: - Improved heat dissipation in power semiconductor devices - Enhanced reliability and performance of electronic systems
Benefits: - Increased efficiency and longevity of power semiconductor devices - Better thermal management in high-power applications
Commercial Applications: Title: Enhanced Heat Dissipation Power Semiconductor Devices for Industrial Applications This technology can be utilized in industrial power systems, electric vehicle components, and renewable energy infrastructure, improving overall performance and reliability.
Prior Art: Further research can be conducted in the field of power semiconductor devices, focusing on heat dissipation techniques and materials used in similar applications.
Frequently Updated Research: Researchers are continually exploring new materials and designs to enhance heat dissipation in power semiconductor devices, leading to more efficient and reliable electronic systems.
Questions about Power Semiconductor Devices: 1. How does the use of adhesive and grease contribute to the heat dissipation in the semiconductor device? 2. What are the potential long-term effects of improved heat dissipation in power electronics?
Original Abstract Submitted
Provided is a power semiconductor device with high heat dissipation from a semiconductor element. The power semiconductor device includes a semiconductor device, a heat sink, grease, an adhesive, and a terminal block, the semiconductor device including the semiconductor element, a sealant sealing the semiconductor element, and a power terminal electrically connected to the semiconductor element, wherein a first area as a selective area of a lower surface of the semiconductor device is bonded to the heat sink through the adhesive, the semiconductor device is in contact with the heat sink through the grease in a second area that is an area other than the selective area of the lower surface of the semiconductor device, the terminal block includes an electrode on an upper surface of the terminal block, and the power terminal is fastened to the terminal block, and is electrically connected to the electrode of the terminal block.
