18539355. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18539355 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of three epitaxial layers stacked on a substrate, with a diffusion prevention layer in between each layer to prevent impurity diffusion. The first and third epitaxial layers have a first conductivity type, while the second epitaxial layer has a second conductivity type. Each epitaxial layer contains active patterns for different regions of the device.
- The semiconductor device includes three epitaxial layers with a diffusion prevention layer in between each layer.
- The first and third epitaxial layers have a first conductivity type, while the second epitaxial layer has a second conductivity type.
- Active patterns are provided in each epitaxial layer for collector, base, and emitter regions.
- The diffusion prevention layer prevents impurity diffusion in the second epitaxial layer.
- The device is designed to improve the performance and efficiency of semiconductor components.
Potential Applications: - This technology can be applied in the manufacturing of high-performance transistors and other semiconductor devices. - It can be used in the development of advanced electronic systems for various industries, including telecommunications and computing.
Problems Solved: - Prevents impurity diffusion in semiconductor devices, improving their overall performance and reliability. - Enhances the functionality of active patterns in different regions of the device.
Benefits: - Improved performance and efficiency of semiconductor components. - Enhanced reliability and longevity of electronic systems utilizing this technology.
Commercial Applications: Title: Advanced Semiconductor Device Technology for High-Performance Electronics This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and telecommunications equipment. The improved efficiency and reliability of semiconductor components can lead to better overall performance in various commercial applications.
Questions about Semiconductor Device Technology: 1. How does the diffusion prevention layer impact the performance of the semiconductor device? The diffusion prevention layer helps maintain the integrity of the different conductivity types in the epitaxial layers, preventing impurity diffusion and ensuring optimal performance of the device.
2. What are the potential implications of using this technology in the telecommunications industry? Implementing this technology in telecommunications equipment can lead to more efficient and reliable communication systems, improving overall network performance and connectivity.
Original Abstract Submitted
A semiconductor device includes first, second, and third epitaxial layers sequentially stacked on a substrate and a first diffusion prevention layer provided in at least one of regions between the first and second epitaxial layers and between the second and third epitaxial layers. The first and third epitaxial layers have a first conductivity type, and the second epitaxial layer has a second conductivity type. The first diffusion prevention layer is configured to prevent an impurity in the second epitaxial layer from being diffused. The first, second, and third epitaxial layers include first, second, and third active patterns, respectively, which are respective provided in upper portions thereof and on collector, base, and emitter regions, respectively, of the substrate.
