18537536. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yeonghan Gwon of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18537536 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate with an active pattern, a channel pattern with vertically stacked and spaced semiconductor patterns, a source/drain pattern, a gate electrode with inner electrodes between semiconductor patterns, an outer electrode on the uppermost semiconductor pattern, and a capping pattern on top of the outer electrode. The outer electrode has a line-width equal to or less than its height.
- The semiconductor device features vertically stacked and spaced semiconductor patterns in the channel pattern.
- The gate electrode includes inner electrodes between neighboring semiconductor patterns and an outer electrode on the uppermost semiconductor pattern.
- The outer electrode has a line-width that is equal to or less than its height.
- A capping pattern is present on the top surface of the outer electrode.
- The device design allows for efficient performance and compact layout.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can be used in the production of high-performance electronic devices.
Problems Solved: - Addresses the need for compact and efficient semiconductor device designs. - Improves the performance of electronic devices through innovative layout designs.
Benefits: - Enhanced performance and efficiency in semiconductor devices. - Compact layout design for space-saving in electronic devices.
Commercial Applications: Title: Advanced Semiconductor Device Design for Enhanced Performance This technology has potential commercial applications in the semiconductor industry for the production of high-performance electronic devices. It can be utilized in the development of advanced consumer electronics, communication devices, and computing systems.
Questions about Semiconductor Device Design: 1. How does the innovative layout design of the semiconductor device contribute to its performance? The vertically stacked and spaced semiconductor patterns, along with the unique gate electrode structure, enhance the efficiency and performance of the device.
2. What are the potential market implications of this advanced semiconductor device design? The technology has the potential to revolutionize the semiconductor industry by enabling the production of high-performance electronic devices with compact layouts and improved efficiency.
Original Abstract Submitted
Disclosed is a semiconductor device comprising a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns that are vertically stacked and spaced apart from each other, a source/drain pattern connected to the semiconductor patterns, a gate electrode on the semiconductor patterns and including inner electrodes between neighboring semiconductor patterns and an outer electrode on an uppermost semiconductor pattern, and a capping pattern on a top surface of the outer electrode. A line-width of the outer electrode is a first width. The outer electrode has a first height. The first height is equal to or less than the first width.
