18535421. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18535421 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation: The semiconductor device described in the patent application includes a unique backside contact plug design that allows for improved connectivity and performance.
- The device features a substrate insulating layer, a gate structure, and a source/drain region.
- A backside contact plug is positioned below the source/drain region, offset from its central axis, and connected to it.
- The source/drain region consists of two epitaxial layers with varying concentrations of a non-silicon element.
- The upper surface of the backside contact plug is in contact with the second epitaxial layer.
Key Features and Innovation:
- Offset backside contact plug design for improved connectivity.
- Use of two epitaxial layers with different concentrations of a non-silicon element in the source/drain region.
- Enhanced performance and reliability of the semiconductor device.
Potential Applications:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved:
- Improved connectivity in semiconductor devices
- Enhanced performance and reliability
- Efficient use of non-silicon elements in epitaxial layers
Benefits:
- Enhanced device performance
- Improved connectivity
- Increased reliability
Commercial Applications: Potential commercial applications include the production of advanced semiconductor devices for various electronic applications, leading to improved performance and reliability in electronic devices.
Questions about Semiconductor Devices: 1. How does the unique backside contact plug design improve connectivity in semiconductor devices? 2. What are the advantages of using two epitaxial layers with varying concentrations of a non-silicon element in the source/drain region?
Original Abstract Submitted
A semiconductor device includes a substrate insulating layer; a gate structure extending in one direction on the substrate insulating layer; a source/drain region outside of the gate structure; and a backside contact plug below the source/drain region to have a second central axis offset from a first central axis of the source/drain region in a horizontal direction, and connected to the source/drain region, wherein the source/drain region includes a first epitaxial layer including a non-silicon element in a first concentration, and a second epitaxial layer on the first epitaxial layer and including a non-silicon element in a second concentration, higher than the first concentration, and at least a portion of an upper surface of the backside contact plug is in contact with the second epitaxial layer.
