18535076. IMAGE SENSOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Seung Joon Lee of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18535076 titled 'IMAGE SENSOR
Simplified Explanation: The patent application describes an image sensor with pixels containing photoelectric conversion areas and transfer gate electrodes on a substrate. The substrate has impurities of a first conductivity type, while the photoelectric conversion areas have impurities of a different second conductivity type. The transfer gate electrodes have extensions of varying depths, with the bottom surface of one extension located in the photoelectric conversion area.
- The image sensor includes pixels with photoelectric conversion areas and transfer gate electrodes.
- The substrate contains impurities of a first conductivity type, while the photoelectric conversion areas have impurities of a different second conductivity type.
- The transfer gate electrodes have extensions of different depths, with one extension's bottom surface in the photoelectric conversion area.
Key Features and Innovation:
- Image sensor with pixels and transfer gate electrodes.
- Substrate with impurities of a first conductivity type.
- Photoelectric conversion areas with impurities of a second conductivity type.
- Transfer gate electrodes with extensions of varying depths.
Potential Applications: The technology can be used in digital cameras, smartphones, security cameras, and other devices requiring image sensors.
Problems Solved: The technology addresses the need for efficient and accurate image capture in electronic devices.
Benefits:
- Improved image quality.
- Enhanced performance in low-light conditions.
- Higher sensitivity to light.
Commercial Applications: Potential commercial applications include digital camera manufacturing, smartphone production, security system development, and medical imaging equipment.
Prior Art: Prior research in image sensor technology and semiconductor device fabrication may provide insights into similar innovations.
Frequently Updated Research: Ongoing research in semiconductor materials, image sensor design, and digital imaging technologies may impact the development of this innovation.
Questions about Image Sensor Technology: 1. How does the impurity type in the photoelectric conversion area affect the sensor's performance? 2. What are the potential challenges in integrating transfer gate electrodes with varying depths in image sensor design?
Original Abstract Submitted
An image sensor includes a substrate including first and second surfaces opposite to each other in a first direction; pixels each including a photoelectric conversion area in the substrate; and a transfer gate electrode overlapping the photoelectric conversion area of one pixel of the plurality of pixels in the first direction. The substrate contains impurities of a first conductivity type. The photoelectric conversion area contains impurities of a different second conductivity type. The transfer gate electrode includes first, second and third extensions extending from the first surface into the substrate and having respective a first, second, and third depths. The first depth is larger than each of the second and third depths. A bottom surface of the first extension is in the photoelectric conversion area. Each of the bottom surfaces of the second and third extensions is spaced apart from the photoelectric conversion area in the first direction.
