18534658. SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT simplified abstract (Robert Bosch GmbH)
Contents
SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT
Organization Name
Inventor(s)
Gregor Schuermann of Reutlingen (DE)
Pascal Gieschke of Reutlingen (DE)
SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18534658 titled 'SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT
The abstract describes a semiconductor component consisting of a semiconductor substrate, an insulation layer, and a first monocrystalline silicon layer. The insulation layer is on the semiconductor substrate, and the first monocrystalline silicon layer is on the insulation layer, extending to at least one first region that includes second monocrystalline silicon.
- The semiconductor component includes a semiconductor substrate, an insulation layer, and a first monocrystalline silicon layer.
- The insulation layer is positioned on the semiconductor substrate, while the first monocrystalline silicon layer is on top of the insulation layer.
- At least one first region extends from the first monocrystalline silicon layer to the surface of the semiconductor substrate, containing second monocrystalline silicon.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It may find applications in the development of high-performance electronic components.
Problems Solved: - Enhances the performance and efficiency of semiconductor components. - Enables the integration of multiple layers of monocrystalline silicon in a single device.
Benefits: - Improved functionality and reliability of semiconductor devices. - Enhanced performance capabilities for electronic applications.
Commercial Applications: Title: Advanced Semiconductor Components for High-Performance Electronics This technology can be utilized in the production of cutting-edge electronic devices, such as smartphones, computers, and other consumer electronics. It has the potential to revolutionize the semiconductor industry by enabling the creation of more efficient and powerful devices.
Questions about the technology: 1. How does the integration of multiple layers of monocrystalline silicon benefit semiconductor devices? 2. What are the potential challenges in implementing this technology on a large scale?
Original Abstract Submitted
A semiconductor component. The semiconductor component has a semiconductor substrate, an insulation layer, and a first monocrystalline silicon layer. The insulation layer is arranged on the semiconductor substrate, and the first monocrystalline silicon layer is arranged on the insulation layer and at least one first region that extends starting from the first monocrystalline silicon layer up to a surface of the semiconductor substrate. The at least one first region includes second monocrystalline silicon.
