18530559. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18530559 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation:
This patent application describes a semiconductor device with a unique word line trench design to improve performance.
- The device includes a substrate with an active region isolated by a layer.
- A word line crosses the active region within the substrate in a word line trench.
- The trench has two sub word line trenches with different widths and distances from the active region.
Key Features and Innovation:
- Unique word line trench design within the substrate.
- Varying widths and distances in the sub word line trenches.
- Optimization for improved performance of the semiconductor device.
Potential Applications:
- Memory devices
- Microprocessors
- Integrated circuits
Problems Solved:
- Enhanced performance and efficiency of semiconductor devices.
- Improved isolation and functionality within the active region.
Benefits:
- Higher performance capabilities.
- Increased efficiency in data processing.
- Enhanced reliability of semiconductor devices.
Commercial Applications:
Semiconductor manufacturers can integrate this technology into their products to enhance performance and efficiency, potentially leading to a competitive edge in the market.
Questions about Semiconductor Devices: 1. What are the key components of a semiconductor device?
- A semiconductor device typically consists of a substrate, active regions, isolation layers, and various interconnects.
2. How does the design of word line trenches impact the performance of a semiconductor device?
- The design of word line trenches can affect the speed, efficiency, and overall functionality of the device.
Original Abstract Submitted
A semiconductor device includes a substrate having an active region defined by an isolation layer, a word line crossing the active region and extending, within the substrate, in a first horizontal direction inside a word line trench, the word line trench being formed in the substrate and including a first sub word line trench and a second sub word line trench. A width, in the first horizontal direction, of a lower surface of the first sub word line trench is greater than a width, in the first horizontal direction, of a lower surface of the second sub word line trench, and a first distance between the lower surface of the first sub word line trench and an upper surface of the active region is less than a second distance between the lower surface of the second sub word line trench and the upper surface of the active region.
