18527470. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yong Jin Shin of Suwon-si (KR)
Kyoung Min Woo of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18527470 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a substrate with deuterium at different concentrations, an active pattern, a gate electrode, a gate insulating layer, interlayer insulating layers, and a wiring pattern.
- The substrate contains deuterium at a first concentration.
- The gate insulating layer contains deuterium at a second concentration.
- The wiring pattern contains deuterium at a third concentration lower than the first concentration.
Potential Applications:
- This technology could be used in the manufacturing of advanced semiconductor devices with improved performance and efficiency.
Problems Solved:
- This technology addresses the need for enhanced semiconductor devices with optimized deuterium concentrations for better functionality.
Benefits:
- Improved performance and efficiency of semiconductor devices.
- Enhanced reliability and durability of the devices.
Commercial Applications:
- This technology could be applied in the production of high-performance electronic devices for various industries, including telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the presence of deuterium at different concentrations impact the performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?
Frequently Updated Research:
- Stay updated on the latest advancements in semiconductor technology and materials science to understand the evolving landscape of deuterium-based semiconductor devices.
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device includes a substrate containing deuterium at a first concentration, an active pattern disposed on the substrate and extending in a first horizontal direction, a gate electrode disposed on the active pattern and extending in a second horizontal direction different from the first horizontal direction, a gate insulating layer disposed between the active pattern and the gate electrode, the gate insulating layer containing deuterium at a second concentration, a first interlayer insulating layer disposed on the gate electrode, a second interlayer insulating layer disposed on the first interlayer insulating layer, and a wiring pattern disposed inside the second interlayer insulating layer, the wiring pattern containing deuterium at a third concentration lower than the first concentration, wherein each of the first to third concentrations is a concentration of deuterium atoms contained in the same unit volume.
