18525319. MICROMECHANICAL Z-ACCELERATION SENSOR WITH REFERENCE ELECTRODE simplified abstract (Robert Bosch GmbH)
Contents
MICROMECHANICAL Z-ACCELERATION SENSOR WITH REFERENCE ELECTRODE
Organization Name
Inventor(s)
Johannes Classen of Reutlingen (DE)
MICROMECHANICAL Z-ACCELERATION SENSOR WITH REFERENCE ELECTRODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18525319 titled 'MICROMECHANICAL Z-ACCELERATION SENSOR WITH REFERENCE ELECTRODE
The patent application describes a micromechanical capacitive z-acceleration sensor that includes a movable micromechanical structure with a seismic mass that can be deflected in a straight line in a first direction perpendicular to the extension plane.
- The sensor comprises a substrate with a layer sequence parallel to the extension plane, including a first polysilicon layer, a second polysilicon layer, and a third polysilicon layer.
- The movable micromechanical structure is formed in the second and third polysilicon layers.
- A measuring capacitance is formed between the seismic mass and a measuring electrode in the first polysilicon layer.
- Reference capacitance is formed between lower and upper reference electrodes in the first and second polysilicon layers.
- The movable micromechanical structure partially overlaps the upper reference electrode in the first direction.
Potential Applications: - Automotive industry for vehicle stability control systems - Aerospace industry for aircraft inertial navigation systems - Consumer electronics for motion detection in smartphones and wearables
Problems Solved: - Accurate measurement of z-axis acceleration - Miniaturization of acceleration sensors - Improved sensitivity and reliability in detecting acceleration
Benefits: - High precision in measuring z-axis acceleration - Compact size for integration into various devices - Enhanced performance in dynamic environments
Commercial Applications: Title: "Micromechanical Capacitive Z-Acceleration Sensor for Automotive and Aerospace Applications" This technology can be utilized in automotive stability control systems, aircraft navigation systems, and consumer electronics for motion detection features.
Prior Art: Prior art related to this technology can be found in patents or research papers on micromechanical acceleration sensors, capacitive sensing technologies, and MEMS devices.
Frequently Updated Research: Ongoing research focuses on improving the sensitivity and accuracy of micromechanical acceleration sensors, exploring new materials for sensor fabrication, and enhancing the integration of sensors into IoT devices.
Questions about Micromechanical Capacitive Z-Acceleration Sensor: 1. How does the sensor's design contribute to its accuracy in measuring z-axis acceleration? 2. What are the key differences between this micromechanical sensor and traditional accelerometer technologies?
Original Abstract Submitted
A micromechanical capacitive z-acceleration sensor. The sensor includes a substrate with a main extension plane and a layer sequence which is parallel to the extension plane, and includes a first polysilicon layer, a second polysilicon layer, and a third polysilicon layer, with a movable micromechanical structure having a seismic mass which can be deflected in a straight line in a first direction perpendicular to the extension plane. The movable micromechanical structure is formed in the second polysilicon layer and the third polysilicon layer. A measuring capacitance is formed between the seismic mass and a measuring electrode formed in the first polysilicon layer. A reference capacitance is formed between lower and upper reference electrodes, which are formed in the first and polysilicon layers, respectively. As viewed in the first direction, the movable micromechanical structure at least partially overlaps the upper reference electrode.
