18510231. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shinya Sato of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18510231 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various components such as electrodes, semiconductor regions of different conductivity types, and regions with varying concentrations of carbon and other elements.
- The first electrode supports the first semiconductor region of a first conductivity type.
- Within the first semiconductor region, there is a first region with a higher concentration of carbon and a first element (e.g., platinum, gold, iron, copper, nickel) compared to the surrounding semiconductor material.
- The second semiconductor region of a second conductivity type is situated on top of the first semiconductor region.
- A second electrode is placed on the second semiconductor region.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance transistors or diodes.
Problems Solved: - This innovation addresses the need for improved semiconductor device performance by optimizing the distribution of carbon and other elements within the material.
Benefits: - Enhanced electrical properties and overall performance of semiconductor devices. - Potential for increased efficiency and reliability in electronic systems.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology could have commercial applications in the semiconductor industry for the production of high-quality electronic components with improved performance characteristics. It may also attract interest from companies involved in the development of cutting-edge electronics.
Questions about the Technology: 1. How does the concentration of carbon and other elements impact the performance of the semiconductor device?
- The concentration of carbon and other elements affects the conductivity and overall behavior of the semiconductor material, influencing its electrical properties.
2. What are the potential implications of using different types of elements in the semiconductor regions?
- Utilizing various elements can lead to tailored electrical characteristics, allowing for customization of semiconductor devices for specific applications.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a first region, a second semiconductor region of a second conductivity type, and a second electrode. The first semiconductor region is located on the first electrode. The first region is located in the first semiconductor region. A concentration of carbon in the first region is greater than a concentration of carbon in the first semiconductor region. A concentration of a first element in the first region is greater than a concentration of the first element in the first semiconductor region. The first element is at least one selected from the group consisting of platinum, gold, iron, copper, and nickel. The second semiconductor region is located on the first semiconductor region. The second electrode is located on the second semiconductor region.
