18510209. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18510209 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a gate electrode structure with multiple gate electrodes, memory channel structures, and contact plugs. The first memory channel structure extends through the first to third gate electrodes, while the second memory channel structure contacts the upper surface of the first memory channel structure and extends through the fourth gate electrode. The first contact plug has a lower portion that extends partially through the gate electrode structure and an upper portion that contacts the upper surface of the lower portion. The lower portion of the first contact plug has a varying width, while the upper portion has a width that gradually increases from bottom to top.
- Gate electrode structure with multiple gate electrodes
- Memory channel structures extending through gate electrodes
- Contact plug with varying width lower portion and gradually increasing width upper portion
- Electrical insulation and connection between contact plug and gate electrodes
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for memory storage and processing applications.
Problems Solved
This technology solves the challenge of efficiently connecting memory channel structures with gate electrodes in semiconductor devices.
Benefits
The benefits of this technology include improved performance, reliability, and efficiency in semiconductor devices.
Potential Commercial Applications
- "Advanced Semiconductor Devices for Memory Storage and Processing Applications"
Possible Prior Art
There may be prior art related to the integration of memory channel structures and gate electrodes in semiconductor devices, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing methods of connecting memory channel structures with gate electrodes in semiconductor devices?
The article does not provide a comparison with existing methods, so it is unclear how this technology differs or improves upon current practices.
What specific performance improvements can be expected from the implementation of this technology in semiconductor devices?
The abstract does not detail the specific performance enhancements that can be achieved by using this technology, leaving this aspect unanswered.
Original Abstract Submitted
A semiconductor device includes a gate electrode structure including first to fourth gate electrodes, a first memory channel structure extending through the first to third gate electrodes, a second memory channel structure contacting an upper surface of the first memory channel structure and extending through the fourth gate electrode, and a first contact plug including a lower portion extending partially through the gate electrode structure and an upper portion on and contacting an upper surface of the lower portion. The lower portion of the first contact plug has a varying width, and the upper portion of the first contact plug has a width gradually increasing from a bottom toward a top thereof. The lower portion of the first contact plug extends through the first, second and third gate electrodes, and is electrically insulated from the first and second gate electrodes, and is electrically connected to the third gate electrode.
