18502563. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Myeonghoon Hong of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18502563 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application includes a common source plate connected to an active region through a discharge structure, all on a lower substrate.

Key Features and Innovation

  • Lower substrate with an active region
  • Common source plate overlapping the lower substrate
  • Discharge structure connecting the common source plate and active region vertically
  • Wall-shaped discharge structure extending parallel to the substrate surface
  • Cell array structure on the common source plate

Potential Applications

This technology could be used in various semiconductor devices, such as power transistors, integrated circuits, and sensors.

Problems Solved

This technology addresses the need for efficient vertical connections between different components in semiconductor devices.

Benefits

  • Improved performance and efficiency in semiconductor devices
  • Enhanced vertical connectivity for better functionality
  • Potential for smaller and more compact device designs

Commercial Applications

Potential commercial applications include power electronics, telecommunications, automotive electronics, and consumer electronics markets.

Questions about Semiconductor Devices

What are the primary components of a semiconductor device?

A semiconductor device typically consists of a substrate, active regions, source plates, and various interconnecting structures.

How does the discharge structure improve vertical connectivity in this semiconductor device?

The discharge structure directly connects the common source plate and the active region, allowing for efficient vertical connections within the device.


Original Abstract Submitted

A semiconductor device may include a lower substrate; an active region on the lower substrate; a common source plate spaced apart from an upper surface of the lower substrate in a vertical direction, and the common source plate overlapping the upper surface of the lower substrate; a discharge structure directly connecting the common source plate and the active region in the vertical direction, and the discharge structure having a wall shape extending in a first direction parallel to the upper surface of the lower substrate; and a cell array structure on the common source plate. A length of the discharge structure in the first direction may be greater than a width of the discharge structure in a second direction parallel to the upper surface of the lower substrate and perpendicular to the first direction.