18500797. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Young Woo Kim of Suwon-si (KR)
Kyoung Woo Lee of Suwon-si (KR)
Min Chan Gwak of Suwon-si (KR)
Sang Cheol Na of Suwon-si (KR)
Anthony Dongick Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18500797 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract includes a substrate with first and second surfaces, a fin-type pattern protruding from the first surface, a source/drain pattern on the fin-type pattern, a source/drain contact, a contact connection via, a buried conductive pattern, and buried insulating liners.
- The device features a unique structure with multiple layers and patterns for efficient electrical connections.
- The buried conductive pattern enhances the conductivity of the device.
- The buried insulating liners provide insulation and protection to the buried conductive pattern.
- The fin-type pattern allows for increased surface area and improved performance.
- The contact connection via ensures proper electrical connections within the device.
Potential Applications: This technology can be applied in various semiconductor devices such as transistors, diodes, and integrated circuits.
Problems Solved: This technology addresses the need for improved conductivity, insulation, and electrical connections in semiconductor devices.
Benefits: The device offers enhanced performance, reliability, and efficiency in electronic applications.
Commercial Applications: This technology can be utilized in the manufacturing of advanced electronic devices for various industries such as telecommunications, computing, and automotive.
Questions about the technology: 1. How does the buried conductive pattern improve the performance of the semiconductor device? 2. What are the specific advantages of the fin-type pattern in this technology?
Frequently Updated Research: Researchers are continuously exploring new materials and designs to further enhance the capabilities of semiconductor devices.
Original Abstract Submitted
A semiconductor device includes a substrate that has first and second surfaces opposite to each other in a first direction, a first fin-type pattern that protrudes in the first direction from the first surface of the substrate and extends in a second direction, a first source/drain pattern on the first fin-type pattern, a first source/drain contact on the first source/drain pattern, a contact connection via that extends in the first direction and is electrically connected to the first source/drain contact, a buried conductive pattern that is in the substrate, is electrically connected to the contact connection via, and has first and second surfaces opposite to each other in the first direction, the first surface of the buried conductive pattern facing the first source/drain contact, and first buried insulating liners that extend along sidewalls and along the first surface of the buried conductive pattern.
