18494449. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18494449 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a conductive pattern and a capacitor connected to the conductive pattern. The capacitor consists of a first electrode structure, a dielectric layer, a second electrode structure, and a plate electrode.
- The second electrode structure of the capacitor contains a first electrode material layer with a first metal element and a nitrogen element, as well as a protective material layer with a second metal element, a Group 14 element, and an oxygen element.
- The innovative aspect of this device lies in the composition of the second electrode structure, which enhances the performance and reliability of the capacitor.
- By incorporating specific metal and non-metal elements in the electrode structure, the device achieves improved electrical properties and stability.
- This innovation opens up possibilities for more efficient and durable semiconductor devices in various electronic applications.
- The unique combination of elements in the electrode structure contributes to the overall functionality and longevity of the capacitor in the semiconductor device.
Potential Applications: This technology can be applied in various electronic devices such as smartphones, computers, and other consumer electronics where capacitors are essential components.
Problems Solved: This technology addresses the need for more reliable and efficient capacitors in semiconductor devices, improving overall performance and longevity.
Benefits: The benefits of this technology include enhanced electrical properties, increased reliability, and improved performance of semiconductor devices.
Commercial Applications: This technology has significant commercial potential in the electronics industry, particularly in the development of advanced electronic devices with superior capacitor performance.
Questions about the technology: 1. How does the composition of the second electrode structure impact the overall performance of the capacitor? 2. What specific advantages does the incorporation of nitrogen and oxygen elements bring to the semiconductor device?
Frequently Updated Research: Researchers are continually exploring new materials and compositions to further enhance the performance and reliability of capacitors in semiconductor devices. Stay updated on the latest advancements in this field for potential future applications.
Original Abstract Submitted
A semiconductor device includes a conductive pattern, and a capacitor electrically connected to the conductive pattern. The capacitor includes a first electrode structure electrically connected to the conductive pattern, a dielectric layer disposed on the first electrode structure, a second electrode structure disposed on the dielectric layer, and a plate electrode disposed on the second electrode structure. The second electrode structure includes a first electrode material layer including a first metal element and a nitrogen element, and a first protective material layer including a second metal element, a Group 14 element, and an oxygen element.
