18473665. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jong Ryeol Yoo of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18473665 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate with a source/drain pattern on a fin-shaped pattern, a source/drain contact, and a buried conductive pattern with varying widths in different directions.
- The device features a source/drain pattern connected to a fin-shaped pattern on the substrate.
- A source/drain contact is connected to the source/drain pattern.
- The buried conductive pattern consists of a first portion and a second portion.
- The width of the buried conductive pattern decreases in one direction as it moves away from a back wiring line and increases in the opposite direction.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of electronic devices.
Problems Solved: - Enhances the connectivity and conductivity of semiconductor devices. - Optimizes the layout and design of integrated circuits.
Benefits: - Improved performance and efficiency of electronic devices. - Enhanced connectivity and conductivity in semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be applied in the production of high-performance electronic devices, such as smartphones, tablets, and computers. It can also benefit industries that rely on advanced semiconductor technology, such as telecommunications and automotive.
Questions about the technology: 1. How does the buried conductive pattern improve the performance of the semiconductor device? The buried conductive pattern enhances the connectivity and conductivity of the device, leading to improved overall performance.
2. What are the potential drawbacks of the varying widths in the buried conductive pattern? The varying widths in the buried conductive pattern may introduce complexities in the manufacturing process, but the benefits in performance outweigh these challenges.
Original Abstract Submitted
A semiconductor device includes a substrate including a substrate having a first side and a second side, a source/drain pattern on a fin-shaped pattern and connected to the fin-shaped pattern, a source/drain contact on the source/drain pattern and connected to the source/drain pattern, and a buried conductive pattern includes a first portion and a second portion, the second portion of between the first portion of the buried conductive pattern and a contact connecting via, at the first portion of the buried conductive pattern a width of the buried conductive pattern in a third direction decreases as the buried conductive pattern goes away from a back wiring line, and at the second portion of the buried conductive pattern, the width of the buried conductive pattern in the third direction increases, as the buried conductive pattern goes away from the back wiring line.
