18470729. MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SK hynix Inc.)

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

SK hynix Inc.

Inventor(s)

Seok Min Jeon of Icheon-si Gyeonggi-do (KR)

Min Ho Lee of Icheon-si Gyeonggi-do (KR)

Seong Man Jeon of Icheon-si Gyeonggi-do (KR)

Tae Hong Gwon of Icheon-si Gyeonggi-do (KR)

Sung Soon Kim of Icheon-si Gyeonggi-do (KR)

Ji Seong Kim of Icheon-si Gyeonggi-do (KR)

Ki Gab Yeon of Icheon-si Gyeonggi-do (KR)

Sang Seob Lee of Icheon-si Gyeonggi-do (KR)

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18470729 titled 'MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

The memory device described in the patent application consists of alternating layers of first and second materials, with a vertical hole passing through them.

• First insulating patterns protrude from the side surface of the first material layers exposed through the vertical hole.
• A blocking layer is formed along the surface of the second material layers exposed between the first insulating patterns, with concave portions that house charge trap patterns.
• Portions of the blocking layer exposed between the charge trap patterns are surrounded by a tunnel insulating layer, a channel layer, and a core pillar.

• • Key Features and Innovation:**

- Alternating material layers with vertical hole for improved memory storage. - Insulating patterns and blocking layer with charge trap patterns for efficient charge trapping. - Tunnel insulating layer, channel layer, and core pillar for enhanced memory performance.

• • Potential Applications:**

- Memory devices for electronic devices. - Data storage applications in computers and servers.

• • Problems Solved:**

- Enhanced memory storage capacity. - Improved data retention and retrieval.

• • Benefits:**

- Higher memory density. - Faster data access speeds. - Increased reliability and durability.

• • Commercial Applications:**

Potential commercial uses include: - Manufacturing of memory chips for consumer electronics. - Data storage solutions for cloud computing.

• • Prior Art:**

Further research can be conducted in the field of memory devices and charge trapping technologies to explore prior art related to this innovation.

• • Frequently Updated Research:**

Stay updated on advancements in memory storage technologies and charge trapping techniques for potential improvements in memory devices.

• • Questions about Memory Devices:**

1. How does the vertical hole in the memory device contribute to its functionality? 2. What are the advantages of using charge trap patterns in memory storage technology?

Original Abstract Submitted

A memory device includes first and second material layers alternately stacked; a vertical hole passing through the first and second material layers; first insulating patterns protruding from a side surface of the first material layers exposed through the vertical hole; a blocking layer formed along a surface of the second material layers exposed between the first insulating patterns, the blocking layer comprising a plurality of concave portions, each of which is between the first insulating patterns; and charge trap patterns formed in the concave portions, wherein portions of the blocking layer exposed between the charge trap patterns, wherein a tunnel insulating layer, a channel layer, and a core pillar, are formed in an area that is substantially surrounded by the charge trap patterns.