18463755. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Takuma Suzuki of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18463755 titled 'SEMICONDUCTOR DEVICE
The embodiment is a semiconductor device that contains silicon carbide. It consists of a semiconductor substrate, a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion.
- The first to third semiconductor portions contain impurities with a first conductivity type, while the fourth semiconductor portion contains impurities with a second conductivity type.
- The carrier concentration of the second semiconductor portion is the same as or lower than that of the first semiconductor portion, and the same as or higher than that of the third semiconductor portion.
- The point defect density of the second semiconductor portion is the same as or higher than that of the first semiconductor portion, and higher than that of the third semiconductor portion.
Potential Applications: - Power electronics - High-temperature applications - Electric vehicles - Renewable energy systems
Problems Solved: - Improved efficiency in power electronics - Enhanced performance in high-temperature environments - Increased reliability in electric vehicle components
Benefits: - Higher efficiency - Greater reliability - Improved performance in extreme conditions
Commercial Applications: Title: "Advanced Silicon Carbide Semiconductor Device for Power Electronics" This technology can be used in power electronics for various industries such as automotive, renewable energy, and industrial manufacturing. It has the potential to revolutionize the way electronic devices operate in high-temperature and high-power applications.
Questions about the technology: 1. How does the carrier concentration affect the performance of the semiconductor device?
- The carrier concentration determines the conductivity of the material, impacting its efficiency and overall performance.
2. What are the implications of using silicon carbide in semiconductor devices?
- Silicon carbide offers higher thermal conductivity and can operate at higher temperatures, making it ideal for demanding applications.
Original Abstract Submitted
The embodiment is a semiconductor device containing silicon carbide. The semiconductor device includes a semiconductor substrate, a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion. Each of the first semiconductor portion to the third semiconductor portion contains impurities having a first conductivity type, and the fourth semiconductor portion contains impurities having a second conductivity type. A carrier concentration of the second semiconductor portion is the same as or lower than a carrier concentration of the first semiconductor portion. The carrier concentration of the second semiconductor portion is the same as or higher than a carrier concentration of the third semiconductor portion. A point defect density of the second semiconductor portion is the same as or higher than a point defect density of the first semiconductor portion, and is higher than a point defect density of the third semiconductor portion.
