18463418. MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Naoki Matsushita of Seoul (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18463418 titled 'MEMORY DEVICE
The memory device described in the abstract includes multiple memory cells and interconnects, as well as a circuit that controls the flow of current during write and read operations.
- The memory device has a first memory cell, a second memory cell, a first interconnect, a second interconnect, and a third circuit.
- The third circuit consists of a first circuit connected to the interconnects and a second circuit also connected to the interconnects.
- During a write or read operation for the first memory cell, the first circuit supplies a current to the first memory cell, the second circuit calculates a current based on the flow through the second interconnect, and the third circuit combines the currents and supplies them to the first interconnect.
Potential Applications: - This technology can be used in various memory devices such as solid-state drives and computer memory modules. - It can also be applied in embedded systems, IoT devices, and other electronic devices requiring non-volatile memory storage.
Problems Solved: - Enhances the efficiency and reliability of memory operations. - Optimizes the flow of current within the memory device. - Improves the overall performance of memory systems.
Benefits: - Faster write and read operations. - Reduced power consumption. - Enhanced data storage capabilities.
Commercial Applications: Title: Advanced Memory Technology for Enhanced Data Storage This technology can be utilized in the development of high-speed, low-power memory solutions for consumer electronics, data centers, and automotive applications. The improved performance and efficiency offered by this innovation can lead to competitive advantages in the market.
Questions about Memory Device Technology: 1. How does this memory device technology compare to traditional memory systems? This memory device technology offers improved efficiency and performance compared to traditional memory systems. By optimizing the flow of current and enhancing memory operations, it provides faster write and read speeds, reduced power consumption, and increased data storage capabilities.
2. What are the potential challenges in implementing this memory device technology in different electronic devices? Implementing this memory device technology in various electronic devices may require customization and integration with existing systems. Compatibility issues, design constraints, and cost considerations could pose challenges in the adoption of this technology across different applications.
Original Abstract Submitted
According to one embodiment, a memory device includes a first memory cell, a second memory cell, a first interconnect connected to the first memory cell and the second memory cell, a second interconnect connected to the second memory cell, and a third circuit. The third circuit includes a first circuit connectable to the first interconnect and the second interconnect and a second circuit connectable to the first interconnect and the second interconnect. During a write operation or a read operation for the first memory cell, the first circuit outputs a first current to be supplied to the first memory cell, the second circuit outputs a third current based on a second current which flows through the second interconnect, and the third circuit supplies a sum of the first current and the third current to the first interconnect.
