18463124. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Katsuhisa Tanaka of Himeji Hyogo (JP)
Hiroshi Kono of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18463124 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of various semiconductor regions, electrodes, and a gate electrode with insulating layers.
- The device includes multiple semiconductor regions of different conductivity types, such as first, second, and third semiconductor regions.
- The gate electrode is positioned among the semiconductor regions, along with the first electrode and second electrode.
- The fourth, fifth, sixth, seventh, and eighth semiconductor regions are all of the second conductivity type and are separated from each other.
- The third electrode is located on the eighth semiconductor region with an insulating layer in between.
Potential Applications: - This semiconductor device could be used in various electronic applications requiring precise control of conductivity types and regions. - It may find applications in power electronics, integrated circuits, and other semiconductor-based technologies.
Problems Solved: - The device addresses the need for efficient control and manipulation of conductivity types within a semiconductor structure. - It provides a solution for creating complex semiconductor devices with multiple regions and electrodes.
Benefits: - Improved performance and efficiency in electronic devices. - Enhanced control over semiconductor properties for specific applications.
Commercial Applications: Title: Semiconductor Device for Advanced Electronics This technology could be utilized in the development of advanced electronic devices, leading to improved performance and functionality in various industries such as telecommunications, automotive, and consumer electronics.
Questions about Semiconductor Devices: 1. How does the positioning of the gate electrode impact the functionality of the semiconductor device?
The gate electrode plays a crucial role in controlling the conductivity of different semiconductor regions, allowing for precise manipulation of electronic properties.
2. What are the potential challenges in manufacturing semiconductor devices with multiple regions and electrodes?
Manufacturing complex semiconductor devices may require advanced fabrication techniques and precise control over material properties to ensure optimal performance.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the second conductivity type, a sixth semiconductor region of the second conductivity type, a seventh semiconductor region of the second conductivity type, an eighth semiconductor region of the second conductivity type, a second electrode, and a third electrode. The fourth semiconductor region is located around the second semiconductor region and the gate electrode. The fourth, fifth and sixth semiconductor regions are separated from each other. The fourth, seventh and eighth semiconductor regions are separated from each other. The third electrode is located on the eighth semiconductor region with an insulating layer interposed.
