18457907. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18457907 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various components such as conductive lines, gate electrodes, channel patterns, and a ferroelectric pattern.
- First conductive lines are spaced apart from each other in a first direction on a substrate.
- Second conductive lines are spaced apart from the first conductive lines in a second direction.
- A gate electrode is positioned between the first and second conductive lines and extends in the first direction.
- A first selection gate electrode is located between the first conductive lines and the gate electrode, also extending in the first direction.
- Multiple channel patterns surround the side surface of the gate electrode and are spaced apart from each other in the first direction.
- Several first selection channel patterns surround the side surface of the first selection gate electrode.
- A ferroelectric pattern is situated between the gate electrode and each of the channel patterns.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in memory devices, logic circuits, and other integrated circuits requiring high performance.
Problems Solved: - The technology addresses the need for improved semiconductor devices with enhanced functionality and performance. - It solves challenges related to data storage, signal processing, and power consumption in electronic devices.
Benefits: - Improved efficiency and speed in data processing. - Enhanced reliability and durability of semiconductor devices. - Potential for reduced power consumption and increased battery life in electronic devices.
Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology has significant commercial potential in the semiconductor industry for the development of cutting-edge electronic devices with superior performance and functionality. It could be utilized in a wide range of applications, including consumer electronics, telecommunications, automotive systems, and more.
Questions about the technology: 1. How does the ferroelectric pattern contribute to the functionality of the semiconductor device? 2. What are the specific advantages of having multiple channel patterns surrounding the gate electrode?
Original Abstract Submitted
A semiconductor device may include first conductive lines spaced apart from each other in a first direction on a substrate, second conductive lines spaced apart from the first conductive lines in a second direction, a gate electrode between the first and second conductive lines and extending in the first direction, a first selection gate electrode between the first conductive lines and the gate electrode and extending in the first direction, a plurality of channel patterns surrounding a side surface of the gate electrode and spaced apart from each other in the first direction, a plurality of first selection channel patterns surrounding a side surface of the first selection gate electrode and a ferroelectric pattern between the gate electrode and each of the channel patterns. The first selection channel patterns may be spaced apart from each other in the first direction and connected to the channel patterns, respectively.
