18456655. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
HYUCKCHAI Jung of Suwon-si (KR)
HYEONGWON Jang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18456655 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a substrate with a peripheral active pattern defined by a device isolation layer, a gate structure on the peripheral active pattern, and a gate spacer covering part of the gate structure's side surface. The gate structure consists of an insulating pattern structure and a metal pattern structure on top of it, with the insulating pattern structure having a recess with a maximum depth in a first direction parallel to the substrate's top surface at a certain height. The gate spacer includes a protrusion inserted into the recess.
- The semiconductor device features a gate structure with an insulating pattern structure and a metal pattern structure.
- The insulating pattern structure includes a recess with a maximum depth in a specific direction parallel to the substrate's top surface.
- A gate spacer covers part of the gate structure's side surface and includes a protrusion inserted into the recess.
- The gate structure is positioned on a peripheral active pattern defined by a device isolation layer on the substrate.
- The insulating pattern structure comprises a first gate insulating pattern and a high-k dielectric layer stacked on the substrate's top surface.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can be used in the development of high-performance integrated circuits. - The innovation can enhance the efficiency and functionality of electronic devices.
Problems Solved: - Provides improved gate structure design for semiconductor devices. - Enhances the performance and reliability of integrated circuits. - Offers better control and management of electrical signals in electronic devices.
Benefits: - Increased efficiency and performance of semiconductor devices. - Enhanced reliability and functionality of integrated circuits. - Improved control and management of electrical signals in electronic systems.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices such as smartphones, tablets, and computers. It can also benefit industries involved in the manufacturing of integrated circuits and semiconductor components.
Questions about Semiconductor Device Technology: 1. How does the gate spacer contribute to the overall performance of the semiconductor device? The gate spacer, with its protrusion inserted into the recess of the insulating pattern structure, helps in enhancing the control and management of electrical signals within the device, leading to improved performance and efficiency.
2. What are the potential market implications of implementing this advanced semiconductor device technology? By incorporating this innovation into electronic devices, manufacturers can produce more efficient and reliable products, potentially increasing market competitiveness and consumer satisfaction.
Original Abstract Submitted
A semiconductor device includes a substrate including a peripheral active pattern defined by a device isolation layer, a gate structure on the peripheral active pattern, and a gate spacer covering at least a portion of a side surface of the gate structure. The gate structure includes an insulating pattern structure and a metal pattern structure on the insulating pattern structure. The insulating pattern structure includes a recess having a maximum depth in a first direction parallel to a top surface of the substrate at a first height. The insulating pattern structure includes a first gate insulating pattern and a high-k dielectric layer, which are sequentially stacked on the top surface of the substrate. The gate spacer includes a protrusion inserted in the recess.
