18452218. DETECTOR AND DETECTION SYSTEM simplified abstract (CANON KABUSHIKI KAISHA)
Contents
DETECTOR AND DETECTION SYSTEM
Organization Name
Inventor(s)
FUMIAKI Mizutani of Kanagawa (JP)
TAKANORI Watanabe of Kanagawa (JP)
DETECTOR AND DETECTION SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18452218 titled 'DETECTOR AND DETECTION SYSTEM
Simplified Explanation
The detector described in the patent application includes a unit cell array with multiple unit cells, each containing a conversion element and an amplification transistor.
- The first unit cell amplifies the signal charge using a first amplification transistor connected to the conversion element.
- The second unit cell outputs a signal corresponding to a constant voltage source using a second amplification transistor connected to the voltage source.
- The unit cells are located in an irradiated region that is exposed to an energy beam.
- Potential Applications:**
- Medical imaging devices
- Security scanners
- Industrial inspection systems
- Problems Solved:**
- Efficient signal amplification in detectors
- Accurate detection of energy beams
- Benefits:**
- Improved signal output accuracy
- Enhanced sensitivity in detecting energy beams
- Versatile applications in various industries
Original Abstract Submitted
A detector includes a unit cell array in which a plurality of unit cells are arranged. The plurality of unit cells include a first unit cell including a first conversion element and a first amplification transistor including a control electrode connected to the first conversion element, the first unit cell being configured to output a signal obtained by amplifying the signal charge by the first amplification transistor, and a second unit cell including a second amplification transistor including a control electrode connected to a constant voltage source, the second amplification transistor being configured to output a signal corresponding to a voltage of the constant voltage source by the second amplification transistor. The first unit cell and the second unit cell are disposed in an irradiated region in the unit cell array, the irradiated region being configured to be irradiated with the energy beam.
