18447397. METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT simplified abstract (Samsung Display Co., LTD.)
METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT
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METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447397 titled 'METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT
The method described in the abstract involves manufacturing a light-emitting element by forming semiconductor layers on a substrate and patterning insulating layers on the side surfaces of the semiconductor layers.
- Formation of a first semiconductor layer on a substrate
- Patterning of a first insulating layer on the side surface of the first semiconductor layer
- Formation of an active layer and a second semiconductor layer on the first semiconductor layer
Potential Applications: - LED manufacturing - Display technology - Optoelectronic devices
Problems Solved: - Improved efficiency in light-emitting element production - Enhanced performance of semiconductor devices
Benefits: - Higher quality light emission - Increased durability of light-emitting elements
Commercial Applications: Title: Advanced LED Manufacturing Process This technology can be used in the production of LED displays, lighting systems, and other optoelectronic devices, leading to more efficient and durable products with improved performance.
Questions about the technology: 1. How does the patterning of insulating layers on the side surfaces of semiconductor layers improve the performance of light-emitting elements? 2. What are the specific advantages of using this method in LED manufacturing processes?
Original Abstract Submitted
A method of manufacturing a light emitting element includes forming a first semiconductor layer on a substrate; patterning a first insulating layer on a side surface of the first semiconductor layer; and forming an active layer and a second semiconductor layer on the first semiconductor layer.