18444758. SEMICONDUCTOR STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
SEMICONDUCTOR STRUCTURE
Organization Name
Inventor(s)
Mao-Ying Wang of New Taipei City (TW)
Yu-Ting Lin of New Taipei City (TW)
SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18444758 titled 'SEMICONDUCTOR STRUCTURE
The method described in the patent application involves manufacturing a semiconductor structure by layering different materials and forming a trench to accommodate a conductive layer.
- Forming a first oxide layer over a landing pad layer
- Creating a middle patterned dielectric layer over the first oxide layer
- Sequentially forming a second oxide layer and a top dielectric layer over the middle patterned dielectric layer
- Forming a trench through the top dielectric layer, the second oxide layer, and the first oxide layer
- Conformally forming a bottom conductive layer in the trench
- Removing a portion of the top dielectric layer adjacent to the trench to expose a portion of the second oxide layer
- Performing an etching process to remove the second oxide layer and the first oxide layer
This innovation allows for the creation of a semiconductor structure with precise layers and a conductive pathway.
Potential Applications: - Semiconductor manufacturing - Electronics industry
Problems Solved: - Precision in semiconductor structure manufacturing - Efficient conductive pathways
Benefits: - Improved performance of semiconductor devices - Enhanced durability and reliability
Commercial Applications: Title: Advanced Semiconductor Manufacturing Process This technology can be utilized in the production of various electronic devices, leading to more efficient and reliable products in the market.
Questions about the technology: 1. How does the method described in the patent application improve semiconductor manufacturing processes? 2. What are the potential implications of this innovation on the electronics industry?
Original Abstract Submitted
A method of manufacturing a semiconductor structure includes: forming a first oxide layer over a landing pad layer; forming a middle patterned dielectric layer over the first oxide layer; sequentially forming a second oxide layer and a top dielectric layer over the middle patterned dielectric layer; forming a trench through the top dielectric layer, the second oxide layer and the first oxide layer; conformally forming a bottom conductive layer in the trench; removing a portion of the top dielectric layer adjacent to the trench to expose a portion of the second oxide layer beneath the portion of the top dielectric layer; and performing an etching process to remove the second oxide layer and the first oxide layer. A semiconductor structure is also provided.
