18444419. PHOTOELECTRIC CONVERSION DEVICE simplified abstract (CANON KABUSHIKI KAISHA)
Contents
PHOTOELECTRIC CONVERSION DEVICE
Organization Name
Inventor(s)
MAHITO Shinohara of Tokyo (JP)
PHOTOELECTRIC CONVERSION DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18444419 titled 'PHOTOELECTRIC CONVERSION DEVICE
Simplified Explanation:
The patent application describes a photoelectric conversion device that can switch between two voltages to efficiently convert light into electrical signals.
- The device includes a photoelectric conversion unit with different semiconductor regions forming a p-n junction.
- A control circuit switches the reverse bias voltage between two voltages to accumulate and transfer signal charge effectively.
- Avalanche multiplication occurs at the p-n junction to enhance the conversion efficiency.
- The control circuit changes the reverse bias voltage to a rectangular shape for optimal performance.
Key Features and Innovation:
- Efficient switching between two voltages for optimal signal charge accumulation and transfer.
- Avalanche multiplication at the p-n junction for enhanced conversion efficiency.
- Control circuit with a unique rectangular shape reverse bias voltage for improved performance.
Potential Applications:
The technology can be used in:
- Solar panels
- Image sensors
- Photodetectors
Problems Solved:
- Efficient conversion of light into electrical signals
- Enhanced performance in low-light conditions
Benefits:
- Improved energy conversion efficiency
- Better performance in challenging lighting conditions
Commercial Applications:
Potential commercial applications include:
- Solar energy systems
- Surveillance cameras
- Medical imaging devices
Prior Art:
Readers can explore prior art related to this technology in the field of photoelectric conversion devices and semiconductor physics.
Frequently Updated Research:
Stay updated on the latest research in photoelectric conversion devices and semiconductor technology for advancements in efficiency and performance.
Questions about Photoelectric Conversion Devices:
1. How does the avalanche multiplication at the p-n junction enhance the conversion efficiency? 2. What are the potential commercial applications of this technology beyond solar panels and image sensors?
Original Abstract Submitted
A photoelectric conversion device includes a photoelectric conversion unit including a first semiconductor region, a second semiconductor region, and a third semiconductor region forming a p-n junction with the second semiconductor region, and a control circuit for switching a voltage of a reverse bias voltage applied between the first and the second semiconductor regions between first and second voltages. The photoelectric conversion device performs a period in which the reverse bias voltage is set to the first voltage to accumulate signal charge in the third semiconductor region, and a period in which the reverse bias voltage is set to the second voltage to enable transfer of signal charge to the first semiconductor region, and avalanche multiplication at the p-n junction between the first and second semiconductor regions. The control circuit switches between the first voltage and the second voltage by changing the reverse bias voltage to a rectangular shape.
