18434981. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Noriyuki Shimoji of Kyoto (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18434981 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a field effect transistor connected to a load, with a control terminal that controls the conduction and interruption of the channel by an electric field. Additionally, there is a nonvolatile memory connected to the control terminal, with a second control terminal that changes the direction of the electric field from the control terminal.
- Field effect transistor connected to a load
- Control terminal regulates conduction and interruption of the channel
- Nonvolatile memory connected to the control terminal
- Second control terminal changes the direction of the electric field
- Innovative integration of nonvolatile memory with field effect transistor
Potential Applications: - Memory storage devices - Integrated circuits - Electronic control systems
Problems Solved: - Efficient control of conduction in a semiconductor device - Enhanced memory functionality in a field effect transistor
Benefits: - Improved performance and functionality of semiconductor devices - Increased efficiency in electronic systems
Commercial Applications: Title: "Enhanced Semiconductor Devices for Memory Storage" This technology can be utilized in various industries such as consumer electronics, telecommunications, and automotive for improved memory storage and electronic control systems.
Questions about the technology: 1. How does the integration of nonvolatile memory enhance the functionality of the field effect transistor? 2. What are the potential implications of using this technology in memory storage devices?
Original Abstract Submitted
Provided is a semiconductor device including a field effect transistor that has a first terminal connected to a load, a second terminal conducting to the first terminal via a channel, and a control terminal that controls conduction and interruption of the channel by an electric field, and a nonvolatile memory that is a nonvolatile memory connected to the control terminal and has a second control terminal supplied with a voltage that changes a direction of the electric field from the control terminal.
