18434616. ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE simplified abstract (Micron Technology, Inc.)
Contents
ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE
Organization Name
Inventor(s)
Zhenming Zhou of San Jose CA (US)
Murong Lang of San Jose CA (US)
Ching-Huang Lu of Fremont CA (US)
Nagendra Prasad Ganesh Rao of Folsom CA (US)
ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18434616 titled 'ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE
The patent application describes a system that includes a memory device and a processing device, where the processing device is responsible for performing operations related to reading data from the memory device.
- The system receives a request to perform a read operation on a segment of the memory device.
- It then checks if the temperature offset value of the segment meets a threshold criterion associated with a program erase cycle count of the segment.
- If the temperature offset value satisfies the threshold criterion, a corrective read operation is performed on the segment, with the sense time parameter of the operation adjusted based on the temperature offset value and the program erase cycle count.
Potential Applications: - This technology could be used in memory devices to improve data reliability and accuracy. - It could find applications in systems where temperature variations can impact the performance of memory devices.
Problems Solved: - Addresses issues related to data integrity in memory devices under varying temperature conditions. - Improves the efficiency of read operations in memory devices by adjusting parameters based on temperature offsets.
Benefits: - Enhanced data reliability and accuracy in memory devices. - Improved performance and efficiency of read operations. - Better adaptability to temperature variations for memory devices.
Commercial Applications: Title: Enhanced Memory Device Technology for Improved Data Reliability This technology could have commercial applications in industries such as data storage, automotive electronics, and consumer electronics where reliable data storage is crucial. It could also be valuable in applications where temperature variations can impact memory device performance.
Prior Art: Readers interested in exploring prior art related to this technology could start by researching patents and publications in the field of memory devices, data storage technologies, and temperature compensation techniques.
Frequently Updated Research: Researchers in the field of memory devices and data storage technologies may be conducting studies on optimizing read operations under varying temperature conditions. Stay updated on relevant research publications in these areas for the latest advancements in the field.
Questions about Memory Device Technology: 1. How does this technology improve data reliability in memory devices? - The technology enhances data reliability by adjusting read operation parameters based on temperature offsets, ensuring accurate data retrieval even under varying temperature conditions.
2. What are the potential commercial applications of this enhanced memory device technology? - The technology could be applied in various industries such as data storage, automotive electronics, and consumer electronics to improve data reliability and performance in memory devices.
Original Abstract Submitted
A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a read operation on a segment of the memory device; determining whether a temperature offset value of the segment satisfies a threshold criterion associated with a program erase cycle count of the segment; and responsive to determining that the temperature offset value satisfies the threshold criterion, performing a corrective read operation on the segment of the memory device, wherein a sense time parameter of the corrective read operation is modified according to the temperature offset value and the program erase cycle count.
