18421704. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kaito Oda of Yokkaichi Mie (JP)
Daichi Sugawara of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18421704 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of various layers and electrodes that enable its functionality. The key features and innovations of this device include:
- Utilization of a composite oxide semiconductor in the channel layer, containing multiple metals for enhanced performance.
- Presence of different semiconductor layers between the electrodes and the channel layer, optimizing conductivity and carrier concentration.
- Specific selection of metals in the semiconductor layers to improve carrier concentration and overall device efficiency.
Potential applications of this technology include advanced electronic devices, sensors, and integrated circuits that require high-performance semiconductor components.
This technology addresses specific problems related to semiconductor device efficiency, carrier concentration, and overall performance in electronic applications.
The benefits of this semiconductor device include improved conductivity, enhanced carrier concentration, and optimized performance in various electronic applications.
In commercial applications, this technology could be utilized in the development of high-performance electronic devices, sensors, and integrated circuits for industries such as telecommunications, computing, and consumer electronics.
For those interested in prior art related to this technology, it would be beneficial to explore research on composite oxide semiconductors, metal-containing semiconductor layers, and carrier concentration optimization in semiconductor devices.
Frequently updated research on this technology may include advancements in composite oxide semiconductor materials, novel electrode designs, and optimization techniques for semiconductor device performance.
Questions about this technology:
1. How does the utilization of multiple metals in the composite oxide semiconductor layer enhance the performance of the semiconductor device? 2. What are the specific advantages of optimizing carrier concentration in semiconductor devices, and how does this technology achieve that?
Original Abstract Submitted
A semiconductor device according to an embodiment includes: a first electrode: a first insulating layer provided on the first electrode; a gate electrode provided on the first insulating layer; a second insulating layer provided on the gate electrode; a second electrode provided on the second insulating layer; and a channel layer penetrating the second insulating layer, the gate electrode, and the first insulating layer and connected to the first and second electrodes, in which the channel layer includes: a first semiconductor layer based on a composite oxide semiconductor containing a plurality of metals; a second semiconductor layer provided between the first semiconductor layer and the first electrode; and a third semiconductor layer provided between the first semiconductor layer and the second electrode, and the second and third semiconductor layers are based on another composite oxide semiconductor containing metals of same types as the metals of the first semiconductor layer, the another composite oxide semiconductor having a metal among the plurality of metals having a higher carrier concentration than other metals, the metal having a higher content rate in the second and third semiconductor layers than in the first semiconductor layer.
