18408246. Regrowth Structures for Micro LED simplified abstract (Apple Inc.)
Contents
Regrowth Structures for Micro LED
Organization Name
Inventor(s)
Erin C. Young of Mountain View CA (US)
Ling Zhang of Saratoga CA (US)
David P. Bour of Cupertino CA (US)
Regrowth Structures for Micro LED - A simplified explanation of the abstract
This abstract first appeared for US patent application 18408246 titled 'Regrowth Structures for Micro LED
Simplified Explanation: The patent application describes light-emitting diodes with regrown semiconductor layers and methods of manufacture. In simple terms, it involves creating LED structures with additional semiconductor layers for improved performance.
- LED structure with regrown semiconductor layers
- Base structure with cladding layers doped with different dopant types
- Mesa pillar with an active layer protruding from the base structure
- Regrown second cladding layer in direct contact with the mesa pillar
- Improved LED performance through additional semiconductor layers
Key Features and Innovation:
- Incorporation of regrown semiconductor layers in LED structures
- Use of different dopant types in cladding layers for enhanced functionality
- Direct contact between regrown second cladding layer and mesa pillar
- Improved performance and efficiency of light-emitting diodes
Potential Applications:
- Lighting applications
- Display technologies
- Signage and advertising
- Automotive lighting
- General illumination
Problems Solved:
- Enhancing the performance of light-emitting diodes
- Improving efficiency and brightness of LED devices
- Providing a method for manufacturing LED structures with regrown semiconductor layers
Benefits:
- Higher performance and efficiency in LED devices
- Improved brightness and color rendering
- Enhanced durability and longevity of LED products
- Potential cost savings in manufacturing processes
Commercial Applications: The technology can be utilized in various commercial applications such as:
- LED lighting products for residential, commercial, and industrial use
- Display screens for televisions, monitors, and electronic devices
- Automotive lighting systems for vehicles
- Signage and advertising displays
- General illumination in public spaces and buildings
Questions about Light Emitting Diodes with Regrown Semiconductor Layers: 1. How do regrown semiconductor layers improve the performance of light-emitting diodes? 2. What are the specific advantages of using different dopant types in the cladding layers of LED structures?
Original Abstract Submitted
Light emitting diodes with regrown semiconductor layers and methods of manufacture are described. In an embodiment, a light emitting diode includes a base structure including a first cladding layer doped with a first dopant type (e.g. n-type) and step surface. A mesa pillar including an active layer protrudes from the step surface, and a regrown second cladding layer doped with a second dopant type (e.g. p-type) is in direct contact with and spans a bottom surface and sidewalls of the mesa pillar and the step surface.
