18406687. DYNAMIC READ RETRY VOLTAGE SEQUENCES IN A MEMORY SUBSYSTEM simplified abstract (Micron Technology, Inc.)
Contents
DYNAMIC READ RETRY VOLTAGE SEQUENCES IN A MEMORY SUBSYSTEM
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
Tomer Tzvi Eliash of Sunnyvale CA (US)
DYNAMIC READ RETRY VOLTAGE SEQUENCES IN A MEMORY SUBSYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18406687 titled 'DYNAMIC READ RETRY VOLTAGE SEQUENCES IN A MEMORY SUBSYSTEM
The abstract of the patent application describes a method, system, and apparatus for determining the application of a read retry operation to a portion of memory based on the likelihood of a read retry timeout meeting a threshold. A reverse trim setting is selected in response to this determination, and the read retry operation is executed using the selected trim setting.
- Simplified Explanation:
- The patent application involves a method to decide when to use a read retry operation on memory based on the likelihood of a timeout meeting a threshold. - A reverse trim setting is chosen depending on this likelihood, and the read retry operation is carried out with this setting.
- Key Features and Innovation:
- Determining the likelihood of a read retry timeout meeting a threshold. - Selecting a reverse trim setting based on this likelihood. - Executing the read retry operation using the selected trim setting.
- Potential Applications:
- Memory management systems. - Data storage devices. - Error correction mechanisms in electronic systems.
- Problems Solved:
- Efficient handling of read retry operations. - Optimizing memory performance. - Enhancing error correction capabilities.
- Benefits:
- Improved reliability of memory systems. - Enhanced data integrity. - Better performance in error-prone environments.
- Commercial Applications:
- Data centers. - Consumer electronics. - Industrial automation systems.
- Questions about Memory Management:
1. How does the reverse trim setting impact the read retry operation? - The reverse trim setting influences the execution of the read retry operation by adjusting the parameters for error correction.
2. What are the potential drawbacks of using read retry operations in memory management? - One potential drawback could be increased latency in data access due to the additional error correction processes involved.
Original Abstract Submitted
Methods, systems, and apparatuses include determining to apply a read retry operation to a portion of memory. The likelihood of a read retry timeout meeting a threshold is determined. A reverse trim setting is selected in response to determining the likelihood of the read retry timeout meets the threshold. The read retry operation is executed using the selected trim setting.
