18389251. SEMICONDUCTOR DEVICE INCLUDING A THREE-DIMENSIONAL INTEGRATED CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE INCLUDING A THREE-DIMENSIONAL INTEGRATED CIRCUIT
Organization Name
Inventor(s)
KYOUNG -MIN Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING A THREE-DIMENSIONAL INTEGRATED CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18389251 titled 'SEMICONDUCTOR DEVICE INCLUDING A THREE-DIMENSIONAL INTEGRATED CIRCUIT
The semiconductor device described in the abstract consists of a package substrate, a first die with a hard macro and through silicon vias, and a second die stacked on top of the first die. The first die is divided into a region without the hard macro and a region with the hard macro, with through silicon vias arranged in different directions and distances in each region.
- The semiconductor device features a unique design with through silicon vias arranged in different directions and distances within the first die.
- The first die includes a macro-region with a hard macro, providing enhanced functionality and performance.
- The arrangement of through silicon vias in the first and second regions allows for efficient signal transmission and connectivity.
- The design of the semiconductor device optimizes space utilization and enhances overall performance.
Potential Applications: This technology could be applied in various semiconductor devices such as microprocessors, memory chips, and sensors. It could also be used in high-performance computing, telecommunications, and automotive electronics.
Problems Solved: The technology addresses the challenge of optimizing space and performance in semiconductor devices. It improves signal transmission efficiency and connectivity within the device.
Benefits: Enhanced functionality and performance in semiconductor devices. Improved space utilization and signal transmission efficiency. Potential for increased speed and reliability in electronic systems.
Commercial Applications: Title: Advanced Semiconductor Device with Unique Through Silicon Via Design This technology could be utilized in the development of high-performance computing systems, advanced smartphones, and IoT devices. It has the potential to impact the semiconductor industry by improving the efficiency and performance of electronic devices.
Questions about the technology: 1. How does the unique design of through silicon vias in the first die improve the performance of the semiconductor device? 2. What are the potential commercial applications of this technology in the semiconductor industry?
Original Abstract Submitted
A semiconductor device includes: a package substrate; a first die on the package substrate and including a hard macro and through silicon vias; and a second die on the first die, wherein the first die includes a first region, which does not include the hard macro, and a second region including a macro-region that includes the hard macro, wherein the through silicon vias of the first region are arranged in a first direction with a first distance and in a second direction with a second distance, wherein the through silicon vias of the second region are arranged in the first direction with a first pitch, and in the second direction with a second pitch, wherein the macro-region is interposed between the through silicon vias arranged in the first direction, wherein the first pitch is greater than the first distance, and wherein the second pitch is less than the second distance.
