18388769. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract (Micron Technology, Inc.)
Contents
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL
Organization Name
Inventor(s)
Srinivas Pulugurtha of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18388769 titled 'MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL
The patent application describes an apparatus with a memory cell, data lines, and access lines arranged in a specific configuration.
- The apparatus includes a memory cell with two transistors, a charge storage structure, and channel regions.
- The data lines and access lines have specific lengths and directions for electrical coupling.
- The memory cell is designed to store and retrieve data efficiently.
Potential Applications: This technology could be used in various electronic devices requiring memory storage, such as smartphones, tablets, and computers.
Problems Solved: This innovation addresses the need for improved memory cell design for faster data access and storage capabilities.
Benefits: The benefits of this technology include enhanced data processing speed, increased memory capacity, and improved overall performance of electronic devices.
Commercial Applications: This technology has significant commercial potential in the consumer electronics industry, where faster and more efficient memory storage is in high demand.
Prior Art: Readers can explore prior art related to memory cell design, transistor technology, and data storage methods to understand the evolution of this innovation.
Frequently Updated Research: Stay updated on the latest research in memory cell technology, semiconductor materials, and data storage solutions to further enhance the capabilities of this innovation.
Questions about Memory Cell Technology: 1. How does this memory cell design compare to traditional memory storage methods? 2. What are the potential scalability challenges of implementing this technology in different electronic devices?
Original Abstract Submitted
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a memory cell, first, second, and third data lines, and first and second access lines. Each of the first, second, and third data lines includes a length extending in a first direction. Each of the first and second access lines includes a length extending in a second direction. The memory cell includes a first transistor including a charge storage structure, and a first channel region electrically separated from the charge storage structure, and a second transistor including a second channel region electrically coupled to the charge storage structure. The first data line is electrically coupled to the first channel region. The second data line is electrically coupled to the first channel region. The third data line is electrically coupled to the second channel region, the second channel region being between the charge storage structure and the third data line. The first access line is located on a first level of the apparatus and separated from the first channel by a first dielectric. The second access line is located on a second level of the apparatus and separated from the second channel by a second dielectric. The charge storage structure is located on a level of the apparatus between the first and second levels.
