18386898. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Young Woo Kim of Suwon-si (KR)
Sang Cheol Na of Suwon-si (KR)
Kyoung Woo Lee of Suwon-si (KR)
Anthony Dongick Lee of Suwon-si (KR)
Min Seung Lee of Suwon-si (KR)
Myeong Gyoon Chae of Suwon-si (KR)
Seung Seok Ha of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18386898 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various components such as a substrate, active pattern, field insulating layer, gate electrode, source/drain region, interlayer insulating layer, through via, source/drain contact, and connection portion.
- The active pattern extends in a first horizontal direction on the substrate, with a field insulating layer surrounding its sidewall.
- A gate electrode extends in a second horizontal direction intersecting the first direction on the active pattern.
- Source/drain regions are located on at least one side of the gate electrode on the active pattern.
- An upper interlayer insulating layer covers the source/drain region and a through via penetrates through the substrate, field insulating layer, and upper interlayer insulating layer in a vertical direction.
- The source/drain contact is inside the upper interlayer insulating layer and connected to the source/drain region.
- A connection portion inside the upper interlayer insulating layer is connected to the through via and the source/drain contact, with a greater width in the first horizontal direction than the source/drain contact.
Potential Applications: - This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be applied in automotive technology for advanced driver assistance systems.
Problems Solved: - The device addresses the need for efficient and compact semiconductor components in modern electronics. - It provides improved connectivity and functionality in electronic circuits.
Benefits: - Enhanced performance and reliability in electronic devices. - Space-saving design for compact electronic products.
Commercial Applications: - The technology can be utilized by semiconductor manufacturers to produce high-performance electronic components for consumer electronics and automotive applications.
Questions about the technology: 1. How does the through via improve the connectivity of the semiconductor device? 2. What are the advantages of having a greater width in the connection portion compared to the source/drain contact?
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first horizontal direction on an upper surface of the substrate, a field insulating layer surrounding a sidewall of the active pattern on the upper surface of the substrate, a first gate electrode extending in a second horizontal direction intersecting the first horizontal direction on the active pattern, a source/drain region disposed on at least one side of the first gate electrode on the active pattern, an upper interlayer insulating layer covering the source/drain region on the field insulating layer, a through via penetrating through the substrate, the field insulating layer and the upper interlayer insulating layer in a vertical direction, the through via spaced apart from the source/drain region in the second horizontal direction, a source/drain contact disposed inside the upper interlayer insulating layer on at least one side of the first gate electrode, the source/drain contact connected to the source/drain region, and a connection portion disposed inside the upper interlayer insulating layer, the connection portion connected to each of the through via and the source/drain contact, wherein a width of the connection portion in the first horizontal direction is greater than a width of the source/drain contact in the first horizontal direction.
- SAMSUNG ELECTRONICS CO., LTD.
- Beom Jin Kim of Suwon-si (KR)
- Guk Hee Kim of Suwon-si (KR)
- Young Woo Kim of Suwon-si (KR)
- Jun Soo Kim of Suwon-si (KR)
- Sang Cheol Na of Suwon-si (KR)
- Kyoung Woo Lee of Suwon-si (KR)
- Anthony Dongick Lee of Suwon-si (KR)
- Min Seung Lee of Suwon-si (KR)
- Myeong Gyoon Chae of Suwon-si (KR)
- Seung Seok Ha of Suwon-si (KR)
- H01L29/78
- H01L29/06
- H01L29/417
- H01L29/423
- H01L29/775
- H01L29/786
- CPC H01L29/7855