18382545. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18382545 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a substrate with an active region on the front surface and a gate structure extending on the active region. Source/drain regions are located on both sides of the gate structure, with front and rear interconnection structures also present.
Key Features and Innovation:
- Active pattern on the active region
- Gate structure extending on the active region
- Source/drain regions on both sides of the gate structure
- Front and rear interconnection structures
- Injection of non-oxidizing material during high-pressure heat treatment process
Potential Applications: This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications.
Problems Solved: This technology addresses the need for improved performance and reliability in semiconductor devices by optimizing the distribution of non-oxidizing material.
Benefits:
- Enhanced performance and reliability of semiconductor devices
- Improved efficiency in high-pressure heat treatment processes
- Potential cost savings in manufacturing
Commercial Applications: This technology could have significant implications in the semiconductor industry, particularly in the development of high-performance electronic devices.
Questions about the Technology: 1. How does the injection of non-oxidizing material during the high-pressure heat treatment process impact the performance of the semiconductor device? 2. What are the potential challenges in scaling up the manufacturing process using this technology?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor manufacturing processes and materials to understand the evolving landscape of this technology.
Original Abstract Submitted
A semiconductor device includes a substrate having a front surface including an active region and a rear surface opposite to the front surface. An active pattern is on the active region. A gate structure extends in a second direction on the active region. Source/drain regions are disposed on the active pattern on both sides of the gate structure. A front interconnection structure is disposed on the gate structure and the source/drain regions. A rear interconnection structure is disposed on the rear surface of the substrate. A target region defined by the source/drain regions and the active pattern includes a non-oxidizing material at a first concentration. The non-oxidizing material is injected during a high-pressure heat treatment process. A rear interconnection region defined by the substrate, the rear through-structure, and the rear interconnection structure includes the non-oxidizing material at a second concentration higher than the first concentration.
