18381908. IMAGE SENSOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Masato Fujita of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18381908 titled 'IMAGE SENSOR
The patent application describes an image sensor with a semiconductor substrate, a photoelectric conversion region, a floating diffusion region, and a vertical transfer gate.
- The image sensor includes a semiconductor substrate with photoelectric conversion and floating diffusion regions.
- A vertical transfer gate on the semiconductor substrate transfers photocharges from the conversion region to the diffusion region.
- The vertical transfer gate consists of first and second vertical electrode portions connected to the photoelectric conversion region.
Potential Applications: - Digital cameras - Surveillance systems - Medical imaging devices
Problems Solved: - Efficient transfer of photocharges - Improved image sensor performance
Benefits: - Higher quality images - Enhanced sensor sensitivity - Reduced noise in captured images
Commercial Applications: Title: Advanced Image Sensors for Enhanced Imaging Devices This technology can be used in various commercial applications such as digital cameras, surveillance systems, and medical imaging devices. The improved performance and efficiency of the image sensor can lead to higher quality images, increased sensitivity, and reduced noise in captured images, making it a valuable component in the development of advanced imaging devices.
Questions about Image Sensors: 1. How does the vertical transfer gate improve the performance of the image sensor? The vertical transfer gate facilitates the efficient transfer of photocharges from the photoelectric conversion region to the floating diffusion region, enhancing the overall performance of the image sensor.
2. What are the potential applications of image sensors with a floating diffusion region? Image sensors with a floating diffusion region can be used in various devices such as digital cameras, surveillance systems, and medical imaging devices to capture high-quality images with improved sensitivity and reduced noise.
Original Abstract Submitted
An image sensor, comprising a semiconductor substrate having first and second surfaces opposed to each other, a photoelectric conversion region in the semiconductor substrate, a floating diffusion region adjacent to the first surface in the semiconductor substrate, and a vertical transfer gate on the first surface of the semiconductor substrate, and extending in a direction perpendicular to the first surface and connected to the photoelectric conversion region. The vertical transfer gate may transfer photocharges collected in the photoelectric conversion region to the floating diffusion region. The vertical transfer gate includes a first vertical electrode portion and a second vertical electrode portion extending from the first surface of the semiconductor substrate in the vertical direction, and connected to the photoelectric conversion region, respectively.
