18374870. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Byunghoon Cho of Suwon-si (KR)

Namjung Kang of Suwon-si (KR)

Kiheum Nam of Suwon-si (KR)

Jihyun Choi of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18374870 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application includes a peripheral circuit transistor in a peripheral circuit region, with first and second connection lines on the same plane above the transistor. The second connection lines have a cutting portion, and a cell capacitor is located in a cell region on the substrate. A first plate pattern is on the cell capacitor, with a second plate pattern on a portion of its surface. A first contact plug directly contacts the upper surface of the second plate pattern, and a third connection line is above the second connection line, facing the cutting portion. Second contact plugs extend vertically to directly contact both sidewalls of the third connection line and upper surfaces of the second connection lines, all on the same plane as the second plate pattern.

  • Peripheral circuit transistor in peripheral circuit region
  • First and second connection lines on same plane above transistor
  • Second connection lines with cutting portion
  • Cell capacitor in cell region on substrate
  • First plate pattern on cell capacitor
  • Second plate pattern on portion of first plate pattern's surface
  • First contact plug directly contacts upper surface of second plate pattern
  • Third connection line above second connection line, facing cutting portion
  • Second contact plugs extend vertically to directly contact sidewalls of third connection line and upper surfaces of second connection lines
  • Third connection line on same plane as second plate pattern

Potential Applications

The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, particularly in the design and layout of peripheral circuit transistors and connection lines.

Problems Solved

This technology addresses challenges related to optimizing the layout and connections in semiconductor devices, especially in ensuring efficient communication between different components while maintaining a compact design.

Benefits

The benefits of this technology include improved performance and reliability of semiconductor devices, enhanced integration of components, and potentially reduced manufacturing costs due to optimized design layouts.

Potential Commercial Applications

The technology could find commercial applications in the semiconductor industry for the production of high-performance electronic devices such as smartphones, tablets, and computers.

Possible Prior Art

One possible prior art for this technology could be the use of similar connection line layouts in previous semiconductor devices, although the specific design elements described in the patent application may be novel.

Unanswered Questions

How does this technology compare to existing methods for optimizing semiconductor device layouts?

The article does not provide a direct comparison with existing methods for optimizing semiconductor device layouts. It would be helpful to understand the specific advantages or improvements offered by this technology compared to traditional approaches.

What potential challenges or limitations could arise in implementing this technology in large-scale semiconductor manufacturing processes?

The article does not address potential challenges or limitations that could arise in implementing this technology in large-scale semiconductor manufacturing processes. It would be important to consider factors such as scalability, cost-effectiveness, and compatibility with existing manufacturing infrastructure.


Original Abstract Submitted

A semiconductor device includes a peripheral circuit transistor disposed in a peripheral circuit region. First connection lines and second connection lines are disposed on a same plane above the peripheral circuit transistor. The second connection lines including a cutting portion. A cell capacitor is disposed on the substrate in a cell region. A first plate pattern is on the cell capacitor. A second plate pattern is on a portion of a surface of the first plate pattern. A first contact plug directly contacts an upper surface of the second plate pattern. A third connection line is disposed above the second connection line. The third connection line faces the cutting portion. Second contact plugs extend vertically to directly contact both sidewalls of the third connection line and upper surfaces of the second connection lines. The third connection line is disposed on a same plane as the second plate pattern.