18372881. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
MOONYOUNG Jeong of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18372881 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes an insulating substrate with a semiconductor layer and an active pattern on top. A bit line is located in the insulating substrate, running parallel to the substrate's bottom surface. A buried node contact penetrates the semiconductor layer vertically, while a word line crosses the active pattern horizontally and connects to the bit line through the buried node contact. The top surface of the buried node contact is higher than the bottom surface of the active pattern.
- Insulating substrate with semiconductor layer and active pattern
- Bit line in the substrate parallel to the bottom surface
- Buried node contact penetrating semiconductor layer vertically
- Word line crossing active pattern horizontally
- Connection between active pattern and bit line through buried node contact
Potential Applications: - Memory devices - Integrated circuits - Semiconductor manufacturing
Problems Solved: - Efficient data storage and retrieval - Improved semiconductor device performance - Enhanced connectivity within the device
Benefits: - Higher data processing speeds - Increased memory capacity - Enhanced overall device functionality
Commercial Applications: Title: Advanced Semiconductor Memory Devices for High-Speed Data Processing This technology can be utilized in various industries such as telecommunications, computing, and consumer electronics for faster and more efficient data processing.
Questions about the technology: 1. How does the buried node contact improve connectivity within the semiconductor device? 2. What advantages does the word line crossing the active pattern horizontally offer in terms of data retrieval speed and efficiency?
Original Abstract Submitted
A semiconductor device may include a substrate including an insulating substrate. A semiconductor layer is on the substrate. An active pattern is on the semiconductor layer. A bit line is disposed in the insulating substrate. The bit line extends along a first direction parallel to a bottom surface of the substrate. A buried node contact penetrates the semiconductor layer in a direction perpendicular to the bottom surface of the substrate. A word line penetrates the active pattern in a second direction that is parallel to the bottom surface of the substrate and crosses the first direction. The active pattern may be connected to the bit line through the buried node contact. A top surface of the buried node contact may be higher than a bottom surface of the active pattern.
