18369248. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
CHAN-SIC Yoon of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18369248 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a substrate with a cell region and a peripheral region, each containing specific components such as gate structures, etch stop layers, and dielectric layers.
- The cell region includes a cell active pattern, a cell gate structure, and a bit-line structure.
- The peripheral region includes a peripheral gate structure with a capping layer.
- The bit-line structure consists of a conductive layer, a dielectric layer, an etch stop layer, and a capping layer.
- The peripheral gate structure includes a conductive layer and a capping layer.
Potential Applications: - This semiconductor device can be used in memory chips, processors, and other integrated circuits. - It can enhance the performance and efficiency of electronic devices.
Problems Solved: - This technology addresses the need for improved semiconductor devices with advanced structures for better functionality.
Benefits: - Improved performance and efficiency in electronic devices. - Enhanced reliability and durability of semiconductor components.
Commercial Applications: - Memory chip manufacturing industry. - Semiconductor device production for consumer electronics.
Questions about the Technology: 1. How does the structure of this semiconductor device contribute to its overall performance? 2. What are the specific advantages of the peripheral gate structure with a capping layer?
Frequently Updated Research: - Stay updated on advancements in semiconductor manufacturing techniques and materials to enhance the performance of these devices.
Original Abstract Submitted
A semiconductor device including: a substrate that includes a cell region and a peripheral region, wherein the cell region includes a cell active pattern; a cell gate structure on the cell active pattern; a bit-line structure electrically connected to the cell active pattern; a peripheral gate structure on the peripheral region; a peripheral etch stop layer on the peripheral gate structure; and a cover dielectric layer on the peripheral etch stop layer, wherein the bit-line structure includes: a bit-line conductive layer; a bit-line dielectric layer on the bit-line conductive layer; a cell etch stop layer on the bit-line dielectric layer; and a bit-line capping layer on the cell etch stop layer, wherein the peripheral gate structure includes: a peripheral gate conductive layer; and a peripheral gate capping layer on the peripheral gate conductive layer.
