18358544. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kouta Tomita of Nonoichi Ishikawa (JP)
Tatsuya Nishiwaki of Yokohama Kanagawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18358544 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of various components including electrodes, semiconductor regions of different conductivity types, insulating films, and Schottky junctions.
- First electrode
- First semiconductor region of a first conductivity type
- Insulating film
- Second electrode
- Second semiconductor region of a second conductivity type
- Third semiconductor region of the first conductivity type
- Third electrode forming a Schottky junction
Key Features and Innovation:
- Formation of Schottky junction on a semiconductor device
- Integration of multiple semiconductor regions with different conductivity types
- Use of insulating film to separate electrodes and semiconductor regions
Potential Applications:
- Power electronics
- Photovoltaic devices
- Light-emitting diodes
- Sensors
Problems Solved:
- Improved efficiency in semiconductor devices
- Enhanced performance in electronic applications
- Better control of electrical properties
Benefits:
- Higher conductivity
- Lower power consumption
- Increased reliability
- Enhanced device performance
Commercial Applications:
- Semiconductor manufacturing industry
- Electronics industry
- Renewable energy sector
Prior Art: Prior research on Schottky junctions in semiconductor devices can be found in academic journals and patent databases.
Frequently Updated Research: Ongoing studies focus on optimizing the design and performance of semiconductor devices with Schottky junctions.
Questions about Semiconductor Devices with Schottky Junctions: 1. How do Schottky junctions impact the performance of semiconductor devices? 2. What are the potential challenges in integrating multiple semiconductor regions with different conductivity types in a single device?
Original Abstract Submitted
A semiconductor device according to one embodiment includes: a first electrode; a first semiconductor region of a first conductivity type disposed above the first electrode; an insulating film disposed in the first semiconductor region; a second electrode disposed in the insulating film; a second semiconductor region of a second conductivity type adjacent to the second electrode via the insulating film; a third semiconductor region of the first conductivity type disposed on the second semiconductor region; and a third electrode that is in contact with the first semiconductor region to form a Schottky junction on a first side surface, is in contact with the second semiconductor region and the third semiconductor region on a second side surface opposite to the first side surface, includes a contact portion having a bottom surface located above a bottom surface of the second semiconductor region, and is electrically coupled to the contact portion.
