18354648. SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Dong Soo Kim of Gyeonggi-do (KR)
Yoon Jae Nam of Gyeonggi-do (KR)
Mun Gi Sim of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18354648 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate with a trench, a bottom gate electrode made of a silicon-doped first metal nitride, and a top gate electrode made of a silicon-doped second metal nitride with higher silicon content and metal-to-nitrogen ratio than the bottom gate electrode.
- The device features a trench structure for improved performance.
- The bottom gate electrode fills the lower portion of the trench for effective gap-filling.
- The top gate electrode enhances the device's functionality with higher silicon content and metal-to-nitrogen ratio.
- The use of silicon-doped metal nitrides in both gate electrodes ensures optimal performance.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can be used in high-performance electronic devices requiring precise control over electrical properties.
Problems Solved: - Improved gap-filling in trench structures. - Enhanced performance and functionality of semiconductor devices.
Benefits: - Increased efficiency and performance of semiconductor devices. - Enhanced control over electrical properties. - Potential for the development of more advanced electronic devices.
Commercial Applications: - This technology has potential applications in the semiconductor industry for the production of high-performance electronic devices. - It can be utilized in the development of advanced consumer electronics and communication devices.
Questions about the technology: 1. How does the use of silicon-doped metal nitrides in gate electrodes impact the performance of semiconductor devices? 2. What are the specific advantages of using a trench structure in semiconductor devices?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor device technology to ensure optimal performance and functionality.
Original Abstract Submitted
A semiconductor device includes: a substrate including a trench; a bottom gate electrode suitable for gap-filling a lower portion of the trench and including a silicon-doped first metal nitride; and a top gate electrode formed over the bottom gate electrode, and including a silicon-doped second metal nitride having a higher silicon content than a silicon content of the bottom gate electrode and having a higher ratio of a metal content to a nitrogen content than a ratio of a metal content to a nitrogen content of the bottom gate electrode.
