18347418. SEMICONDUTOR DEVICE simplified abstract (SK hynix Inc.)
Contents
SEMICONDUTOR DEVICE
Organization Name
Inventor(s)
Young Cheol Song of Icheon (KR)
SEMICONDUTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18347418 titled 'SEMICONDUTOR DEVICE
The semiconductor device described in the abstract includes a variable resistance layer, a selector layer, a first protective layer with higher nitrogen content than silicon content, and a second protective layer with higher silicon content than nitrogen content.
- Variable resistance layer
- Selector layer
- First protective layer with higher nitrogen content
- Second protective layer with higher silicon content
Potential Applications: - Memory devices - Resistive random-access memory (ReRAM) - Non-volatile memory applications
Problems Solved: - Enhanced protection of the variable resistance and selector layers - Improved durability and reliability of the semiconductor device
Benefits: - Increased longevity of the device - Enhanced performance and stability - Reduced risk of damage or failure
Commercial Applications: Title: Advanced Semiconductor Devices for Memory Applications This technology can be utilized in the production of high-performance memory devices for various commercial applications, including consumer electronics, data storage systems, and computing devices. The enhanced protection and durability offered by this semiconductor device make it a valuable component in the development of reliable and efficient memory solutions.
Questions about the Technology: 1. How does the higher nitrogen content in the protective layers contribute to the overall performance of the semiconductor device? 2. What specific advantages does this technology offer in comparison to traditional memory devices?
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device according to an implementation of the disclosed technology may include a variable resistance layer; a selector layer disposed over or under the variable resistance layer; a first protective layer disposed on sidewalls of the variable resistance layer and sidewalls of the selector layer, the first protective layer including silicon (Si) and nitrogen (N) and having a nitrogen (N) content higher than a silicon (Si) content; and a second protective layer disposed over the first protective layer, the second protective layer including silicon (Si) and nitrogen (N) and having a silicon (Si) content higher than a nitrogen (N) content.
